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Category:G11C5/06
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Pages in category "G11C5/06"
The following 200 pages are in this category, out of 358 total.
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- 17692996. SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17726086. COMPUTE-IN-MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17825764. NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17828339. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830042. DECODER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17836228. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17887533. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17888460. MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN VERTICAL THREE DIMENSIONAL (3D) MEMORY simplified abstract (Micron Technology, Inc.)
- 17893681. STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17893966. SEMICONDUCTOR MEMORIES INCLUDING EDGE MATS HAVING FOLDED DIGIT LINES simplified abstract (Micron Technology, Inc.)
- 17933363. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17933589. HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY simplified abstract (Intel Corporation)
- 17935119. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17935122. STORAGE DEVICE USING WAFER-TO-WAFER BONDING AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17947397. MODULE BOARD AND MEMORY MODULE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17954316. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME simplified abstract (Changxin Memory Technologies, Inc.)
- 17954394. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17973202. SEMICONDUCTOR DEVICE INCLUDING MEMORY STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17976955. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18052412. MEMORY CELL ARRAY INCLUDING PARTITIONED DUAL LINE STRUCTURE AND DESIGN METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18108657. MEMORY PACKAGE AND MEMORY MODULE INCLUDING THE MEMORY PACKAGE simplified abstract (SK hynix Inc.)
- 18144531. SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18165692. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18170109. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18177335. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18223166. SEMICONDUCTOR DEVICE INCLUDING MEMORY STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18227355. MEMORY CELL ARRAY OF A STATIC RANDOM ACCESS MEMORY AND A STATIC RANDOM ACCESS MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18229249. SCHEDULED INTERRUPTS FOR PEAK POWER MANAGEMENT TOKEN RING COMMUNICATION simplified abstract (Micron Technology, Inc.)
- 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18317344. STORAGE DEVICES HAVING MULTI DROP STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18329067. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18337605. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18346736. READ-ONLY MEMORY METHOD, LAYOUT, AND DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18354869. MEMORY DEVICE AND SYSTEM DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18356951. SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE simplified abstract (SK hynix Inc.)
- 18358702. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION simplified abstract (SanDisk Technologies LLC)
- 18361132. NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY simplified abstract (Samsung Electronics Co., Ltd.)
- 18365726. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18366885. INTEGRATED CIRCUIT DEVICE, MEMORY CELL AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18367075. NON-VOLATILE 3D MEMORY SEARCH ARCHITECTURE (Macronix International Co., Ltd.)
- 18367619. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383603. MEMORY DEVICE AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18386472. MEMORY DEVICE HAVING ASYMMETRIC PAGE BUFFER ARRAY ARCHITECTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18388295. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18391380. MEMORY ARRAY CIRCUIT ARRANGEMENT simplified abstract (Micron Technology, Inc.)
- 18402172. Write Driver Boost Circuit for Memory Cells simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403115. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18405049. ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18407675. Array Of Capacitors, Array Of Memory Cells, And Methods Used In Forming An Array Of Capacitors simplified abstract (Micron Technology, Inc.)
- 18409397. DECODING ARCHITECTURE FOR WORD LINE TILES simplified abstract (Micron Technology, Inc.)
- 18413596. SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE (SK hynix Inc.)
- 18415928. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18423583. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18428836. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)
- 18433863. Memory Array and Methods Used in Forming a Memory Array simplified abstract (Micron Technology, Inc.)
- 18437961. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract (Intel Corporation)
- 18441942. SPLIT PILLAR AND PIER MEMORY ARCHITECTURES simplified abstract (Micron Technology, Inc.)
- 18442660. METHODS AND APPARATUS TO FACILITATE ATOMIC OPERATIONS IN VICTIM CACHE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18443463. NONVOLATILE MEMORY DEVICES AND MEMORY PACKAGES INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18447788. CELL STRUCTURES AND POWER ROUTING FOR INTEGRATED CIRCUITS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18450969. SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18452695. SEMICONDUCTOR MEMORY STACKS CONNECTED TO PROCESSING UNITS AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18467947. CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LAYER (Intel Corporation)
- 18485616. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18487879. MEMORY DEVICES INCLUDING CONTACT STRUCTURES AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18490922. SEMICONDUCTOR MEMORY DEVICES WITH FLYING BIT LINES AND METHODS OF MANUFACTURING THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18499449. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18503479. METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE simplified abstract (Robert Bosch GmbH)
- 18504093. MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 18504637. SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18508757. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18513303. REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 18515649. Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories simplified abstract (Apple Inc.)
- 18515906. MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract (Micron Technology, Inc.)
- 18517970. MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME (SK hynix Inc.)
- 18523494. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Kioxia Corporation)
- 18525198. WORDLINE CONTACT FORMATION FOR NAND DEVICE simplified abstract (Applied Materials, Inc.)
- 18533410. Integrated Assemblies and Semiconductor Memory Devices simplified abstract (Micron Technology, Inc.)
- 18537013. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18542240. TRANSISTOR CONFIGURATIONS FOR MULTI-DECK MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18545370. SEMICONDUCTOR DEVICE (SK hynix Inc.)
- 18561961. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18584151. METHODS AND APPARATUS TO REDUCE READ-MODIFY-WRITE CYCLES FOR NON-ALIGNED WRITES simplified abstract (Texas Instruments Incorporated)
- 18586360. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18587961. SEMICONDUCTOR DEVICE INCLUDING INTERNAL TRANSMISSION PATH AND STACKED SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SK hynix Inc.)
- 18593979. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18596731. INTEGRATED CIRCUITS HAVING CROSS-COUPLE CONSTRUCTS AND SEMICONDUCTOR DEVICES INCLUDING INTEGRATED CIRCUITS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18606790. INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18609404. TRI-GATE TRANSISTOR AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18612110. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18623929. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18624312. MEMORY CARD WITH MULTIPLE MODES, AND HOST DEVICE CORRESPONDING TO THE MEMORY CARD simplified abstract (Kioxia Corporation)
- 18631842. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18643753. 4CPP SRAM CELL AND ARRAY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18645788. PORTABLE ELECTRONIC DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18653785. SEMICONDUCTOR STORAGE DEVICE simplified abstract (KIOXIA CORPORATION)
- 18653978. MEMORY CELL AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME simplified abstract (SK hynix Inc.)
- 18659407. VICTIM CACHE WITH WRITE MISS MERGING simplified abstract (Texas Instruments Incorporated)
- 18664547. SEMICONDUCTOR DEVICES, NONVOLATILE MEMORY DEVICES INCLUDING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND METHODS FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18668329. ETCH STOP LAYER FOR MEMORY DEVICE FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18674788. SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER simplified abstract (Micron Technology, Inc.)
- 18734190. SEMICONDUCTOR STRUCTURE HAVING A BUTTED CONTACT AND METHOD OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18737192. SEMICONDUCTOR DEVICES simplified abstract (SK hynix Inc.)
- 18740905. MEMORY DEVICE (Kioxia Corporation)
- 18743245. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18811059. INTERCONNECTIONS FOR 3D MEMORY (Micron Technology, Inc.)
- 18815624. MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES (Micron Technology, Inc.)
- 18818251. MEMORY DEVICES AND RELATED METHODS (Lodestar Licensing Group LLC)
- 18818738. METHODS AND APPARATUS FOR EVICTION IN DUAL DATAPATH VICTIM CACHE SYSTEM (TEXAS INSTRUMENTS INCORPORATED)
- 18828760. MEMORY DEVICE (Kioxia Corporation)
- 18830510. STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE (Kioxia Corporation)
- 18884849. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18945603. SEMICONDUCTOR DEVICE INCLUDING STOPPER LAYER AND ELECTRONIC SYSTEM INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18946956. SEMICONDUCTOR PACKAGE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18952621. MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME (SK hynix Inc.)
- 18953248. THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY (Kioxia Corporation)
- 18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 18960230. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18964178. SEMICONDUCTOR MEMORY DEVICE WITH A THREE-DIMENSIONAL STACKED MEMORY CELL STRUCTURE (Kioxia Corporation)
- 18966252. METHODS AND APPARATUS TO REDUCE BANK PRESSURE USING AGGRESSIVE WRITE MERGING (Texas Instruments Incorporated)
- 18966268. FULLY PIPELINED READ-MODIFY-WRITE SUPPORT (Texas Instruments Incorporated)
- 18966674. MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES AND ADDITIONAL SLOT STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS (Micron Technology, Inc.)
- 18967733. Computing-In-Memory Architecture (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18969510. MEMORY DEVICES INCLUDING PAD STRUCTURES (Micron Technology, Inc.)
- 18970001. METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM (ASM IP Holding B.V.)
A
- Apple inc. (20240161804). Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories simplified abstract
- Apple Inc. patent applications on May 16th, 2024
- Applied materials, inc. (20240268108). V-NAND STACKS WITH DIPOLE REGIONS simplified abstract
- Applied Materials, Inc. patent applications on August 8th, 2024
I
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20250095693). CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LAYER
- Intel Corporation patent applications on March 20th, 2025
- Intel Corporation patent applications on May 30th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
K
- Kioxia corporation (20240096417). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240099004). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Kioxia corporation (20240296888). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240321358). SEMICONDUCTOR DEVICE simplified abstract
- Kioxia corporation (20240321363). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240421071). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20240428837). MEMORY DEVICE
- Kioxia corporation (20250095692). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20250095705). MEMORY DEVICE
- Kioxia corporation (20250095733). STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE
- Kioxia corporation (20250098166). SEMICONDUCTOR MEMORY DEVICE WITH A THREE-DIMENSIONAL STACKED MEMORY CELL STRUCTURE
- Kioxia Corporation patent applications on December 19th, 2024
- Kioxia Corporation patent applications on December 26th, 2024
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 26th, 2024
- KIOXIA CORPORATION patent applications on September 5th, 2024
M
- Micron technology, inc. (20240130128). SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS simplified abstract
- Micron technology, inc. (20240161801). DECODING ARCHITECTURE FOR WORD LINE TILES simplified abstract
- Micron technology, inc. (20240162156). REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY simplified abstract
- Micron technology, inc. (20240164093). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240185892). MEMORY ARRAY DECODING AND INTERCONNECTS simplified abstract
- Micron technology, inc. (20240194264). MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract
- Micron technology, inc. (20240194671). TRANSISTOR CONFIGURATIONS FOR MULTI-DECK MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240203481). DECODING ARCHITECTURE FOR MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240237330). Array Of Capacitors, Array Of Memory Cells, And Methods Used In Forming An Array Of Capacitors simplified abstract
- Micron technology, inc. (20240244837). Memory Array and Methods Used in Forming a Memory Array simplified abstract
- Micron technology, inc. (20240249772). ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240251543). MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES simplified abstract
- Micron technology, inc. (20240257841). DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240257842). CAPACITIVE SENSING WITH A MICRO PUMP IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240257855). MEMORY CELL SENSING ARCHITECTURE simplified abstract
- Micron technology, inc. (20240284660). SPLIT PILLAR AND PIER MEMORY ARCHITECTURES simplified abstract
- Micron technology, inc. (20240290375). MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240312498). SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER simplified abstract
- Micron technology, inc. (20240422993). MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES
- Micron technology, inc. (20250087249). INTERCONNECTIONS FOR 3D MEMORY
- Micron technology, inc. (20250098158). MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES AND ADDITIONAL SLOT STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
- Micron technology, inc. (20250098159). MEMORY DEVICES INCLUDING PAD STRUCTURES
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on August 1st, 2024
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on December 19th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- Micron Technology, Inc. patent applications on January 23rd, 2025
- Micron Technology, Inc. patent applications on January 30th, 2025
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on July 18th, 2024
- Micron Technology, Inc. patent applications on July 25th, 2024
