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Category:G11C29/12
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Pages in category "G11C29/12"
The following 200 pages are in this category, out of 229 total.
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- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17697240. STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17801467. METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES simplified abstract (Micron Technology, Inc.)
- 17807303. MEMORY SECTION SELECTION FOR A MEMORY BUILT-IN SELF-TEST simplified abstract (Micron Technology, Inc.)
- 17807307. REFRESH RATE SELECTION FOR A MEMORY BUILT-IN SELF-TEST simplified abstract (Micron Technology, Inc.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17873869. VOLTAGE TESTING CIRCUIT WITH ERROR PROTECTION SCHEME simplified abstract (Micron Technology, Inc.)
- 17943706. BUILT-IN SELF-TEST BURST PATTERNS BASED ON ARCHITECTURE OF MEMORY simplified abstract (Micron Technology, Inc.)
- 17949867. TESTING OPERATIONS FOR MEMORY SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17954663. SEMICONDUCTOR MEMORY DEVICE DETECTING DEFECT, AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18055566. ADJUSTING MEMORY POWER CONSUMPTION simplified abstract (Microsoft Technology Licensing, LLC)
- 18058740. TESTING METHOD AND TESTING SYSTEM simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18059124. MEMORY DEVICE AND TEST METHOD OF MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18059462. BUILT-IN SELF-TEST CIRCUITS FOR MEMORY SYSTEMS HAVING MULTIPLE CHANNELS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18068337. STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18090733. TESTING PARITY AND ECC LOGIC USING MBIST simplified abstract (Advanced Micro Devices, Inc.)
- 18096407. SEMICONDUCTOR DEVICE AND METHOD FOR PERFORMING TEST simplified abstract (SK hynix Inc.)
- 18100614. Register Bank Architecture with Latches simplified abstract (Arm Limited)
- 18100969. TEST CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SK hynix Inc.)
- 18116019. TEST SYSTEMS CONFIGURED TO PERFORM TEST MODE OPERATIONS FOR MULTIPLE MEMORY DEVICES simplified abstract (SK hynix Inc.)
- 18123852. Sense Amplifier Scan Capture Circuit with Reduced Sense Amplifier Offset simplified abstract (QUALCOMM Incorporated)
- 18149842. DIGITAL VERIFY FAILBIT COUNT (VFC) CIRCUIT simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18155547. LATCH TYPE SENSE AMPLIFIER FOR TESTING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18174186. SEMICONDUCTOR MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18205083. MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS simplified abstract (Micron Technology, Inc.)
- 18215474. MEMORY DEVICE INTERFACE AND METHOD simplified abstract (Micron Technology, Inc.)
- 18222563. MEMORY SYSTEM, OPERATING METHOD OF THE SAME, AND CONTROLLER OF MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18223298. PROGRAM REFRESH WITH GATE-INDUCED DRAIN LEAKAGE simplified abstract (Micron Technology, Inc.)
- 18226340. MEMORY CONTROLLER, AN OPERATION METHOD THEREOF, A MEMORY DEVICE, AND A MEMORY SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 18302034. SEMICONDUCTOR MEMORY DEVICES THAT SUPPORT ENHANCED DATA RECOVERY OPERATIONS simplified abstract (Samsung Electronics Co., Ltd.)
- 18312280. LOOPBACK DATAPATH FOR CLOCK QUALITY DETECTION simplified abstract (Micron Technology, Inc.)
- 18320088. SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18325999. MEMORY DEVICE PERFORMING SENSING OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18330117. ELECTRONIC DEVICES RELATED TO COMPENSATION OF MONITORING SIGNALS simplified abstract (SK hynix Inc.)
- 18333756. MEMORY DEVICE INCLUDING SENSE AMPLIFYING CIRCUIT simplified abstract (SK Hynix Inc.)
- 18347631. VOLATILE MEMORY DEVICES AND METHODS OF OPERATING SAME TO IMPROVE RELIABILITY simplified abstract (Samsung Electronics Co., Ltd.)
- 18358605. DATA INTEGRITY CHECK IN NON-VOLATILE STORAGE simplified abstract (Western Digital Technologies, Inc.)
- 18362130. MEMORY DEVICES AND ELECTRONIC DEVICES OUTPUTING EVENT DATA RELATED TO OCCURRENCES OF ERRORS AND OPERATING METHODS OF MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18364303. MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18368086. MEMORY REPAIR CIRCUIT, A MEMORY REPAIR METHOD, AND A MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18383603. MEMORY DEVICE AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18392740. AT-SPEED TEST OF FUNCTIONAL MEMORY INTERFACE LOGIC IN DEVICES simplified abstract (Texas Instruments Incorporated)
- 18399018. MEMORY DEVICE DETECTING DEFECT OF WORD LINE PATH AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18403091. WORDLINE DEFECT DETECTION CIRCUIT, WORDLINE DEFECT DETECTION METHOD, AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18406424. BIT COUNTING CIRCUITS AND MEMORY DEVICES INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18417517. DYNAMIC WORD LINE ALLOCATION IN MEMORY SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18429729. METHOD FOR TUNING AN EXTERNAL MEMORY INTERFACE simplified abstract (Texas Instruments Incorporated)
- 18438732. MEMORY SYSTEM INCLUDING A SUB-CONTROLLER AND OPERATING METHOD OF THE SUB-CONTROLLER simplified abstract (SK hynix Inc.)
- 18443997. MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18455031. METHOD FOR OPTIMIZING FLASH MEMORY CHIP AND RELATED APPARATUS simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18486789. CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18488269. SEMICONDUCTOR SYSTEM FOR PERFORMING READ-MODIFY-WRITE OPERATION (SK hynix Inc.)
- 18500841. APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT simplified abstract (SK hynix Inc.)
- 18504324. APPARATUSES AND METHODS FOR SINGLE-PASS ACCESS OF ECC INFORMATION, METADATA INFORMATION OR COMBINATIONS THEREOF simplified abstract (Micron Technology, Inc.)
- 18512792. SYSTEMS AND METHODS TO DETECT CELL-INTERNAL DEFECTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521382. WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY simplified abstract (Micron Technology, Inc.)
- 18521891. COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18529619. NONVOLATILE MEMORY PACKAGE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18586174. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 18595065. STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18624070. SINGLE "A" LATCH WITH AN ARRAY OF "B" LATCHES simplified abstract (SambaNova Systems, Inc.)
- 18635869. SELF-CALIBRATION IN A MEMORY DEVICE (Micron Technology, Inc.)
- 18638379. SELF-CALIBRATION IN A MEMORY DEVICE (Micron Technology, Inc.)
- 18647867. CENTRALIZED ERROR CORRECTION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 18668593. HYBRID MEMORY SYSTEM WITH INCREASED BANDWIDTH simplified abstract (QUALCOMM Incorporated)
- 18677544. STORAGE DEVICE DETERMINING DETERIORATION WORDLINE, AND METHOD OF OPERATING THE SAME (Samsung Electronics Co., Ltd.)
- 18746565. MEMORY SYSTEMS HAVING MEMORY DEVICES THEREIN WITH ENHANCED ERROR CORRECTION CAPABILITY AND METHODS OF OPERATING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18755062. PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES simplified abstract (Micron Technology, Inc.)
- 18756406. INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST FOR MULTIPLE MEMORY DEVICE RANKS simplified abstract (Micron Technology, Inc.)
- 18759105. TRIPLE VIA CHAIN FOR ADVANCED INTERCONNECT IN A MEMORY DEVICE (Micron Technology, Inc.)
- 18894510. MEMORY CIRCUIT (ROHM CO., LTD.)
- 18945527. MEMORY AND OPERATION METHOD THEREOF (SK hynix Inc.)
- 18963358. MEMORY TEST CIRCUIT, MEMORY ARRAY, AND TESTING METHOD OF MEMORY ARRAY (Taiwan Semiconductor Manufacturing Co., Ltd.)
A
B
C
I
- Intel corporation (20240257890). METHODS AND APPARATUS TO SELECT ADDRESSES FOR MEMORY TRAINING simplified abstract
- Intel corporation (20240404617). RUNTIME ALERT SIGNAL ACTIVATION TEST MODE
- Intel corporation (20240404617). RUNTIME ALERT SIGNAL ACTIVATION TEST MODE simplified abstract
- Intel corporation (20250022527). DATA TRANSFER OVER AN INTERCONNECT BETWEEN DIES OF A THREE-DIMENSIONAL DIE STACK
- Intel Corporation patent applications on August 1st, 2024
- Intel Corporation patent applications on December 5th, 2024
- Intel Corporation patent applications on January 16th, 2025
K
M
- MENTA (20250061958). LOGIC DEVICE AND SYSTEM AND METHODS FOR DEFINITION AND CONFIGURATION OF A LOGIC DEVICE
- Micron technology, inc. (20240127901). TEMPERATURE-BASED ERROR MASKING DURING MBIST OPERATION simplified abstract
- Micron technology, inc. (20240127902). INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST simplified abstract
- Micron technology, inc. (20240161856). APPARATUSES AND METHODS FOR SINGLE-PASS ACCESS OF ECC INFORMATION, METADATA INFORMATION OR COMBINATIONS THEREOF simplified abstract
- Micron technology, inc. (20240177792). COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS simplified abstract
- Micron technology, inc. (20240185915). OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240185941). METHODS FOR RECOVERY FOR MEMORY SYSTEMS AND MEMORY SYSTEMS EMPLOYING THE SAME simplified abstract
- Micron technology, inc. (20240194258). MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract
- Micron technology, inc. (20240194284). METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES simplified abstract
- Micron technology, inc. (20240249789). DYNAMIC WORD LINE ALLOCATION IN MEMORY SYSTEMS simplified abstract
- Micron technology, inc. (20240265989). TRACKING AND REFRESHING STATE METRICS IN MEMORY SUB-SYSTEMS simplified abstract
- Micron technology, inc. (20240265991). BIT RETIRING TO MITIGATE BIT ERRORS simplified abstract
- Micron technology, inc. (20240290411). TOPOLOGY-BASED RETIREMENT IN A MEMORY SYSTEM simplified abstract
- Micron technology, inc. (20240347110). PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES simplified abstract
- Micron technology, inc. (20240347123). CENTRALIZED ERROR CORRECTION CIRCUIT simplified abstract
- Micron technology, inc. (20240347125). INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST FOR MULTIPLE MEMORY DEVICE RANKS simplified abstract
- Micron technology, inc. (20240412795). TRACK CHARGE LOSS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED IN CALIBRATION OPERATIONS
- Micron technology, inc. (20240412796). APPARATUSES AND METHODS FOR WRITE DATA PRECONDITIONING USING A NEURAL NETWORK
- Micron technology, inc. (20240412801). TECHNIQUES FOR DETECTING A STATE OF A BUS
- Micron technology, inc. (20240412803). REDUCING PARTIAL BLOCK PROGRAMMING USING DYNAMIC TRIM SETTINGS
- Micron technology, inc. (20240420789). SELF-CALIBRATION IN A MEMORY DEVICE
- Micron technology, inc. (20240420790). SELF-CALIBRATION IN A MEMORY DEVICE
- Micron technology, inc. (20250014665). TRIPLE VIA CHAIN FOR ADVANCED INTERCONNECT IN A MEMORY DEVICE
- Micron technology, inc. (20250104789). DUAL-READ DATA INTEGRITY SCAN IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250104792). APPARATUS INCLUDING BTI CONTROLLER
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on December 12th, 2024
- Micron Technology, Inc. patent applications on December 19th, 2024
- Micron Technology, Inc. patent applications on February 13th, 2025
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 25th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on March 27th, 2025
- Micron Technology, Inc. patent applications on March 6th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 30th, 2024
- Micron Technology, Inc. patent applications on October 17th, 2024
Q
- Qualcomm incorporated (20240304271). HYBRID MEMORY SYSTEM WITH INCREASED BANDWIDTH simplified abstract
- Qualcomm incorporated (20240321376). Sense Amplifier Scan Capture Circuit with Reduced Sense Amplifier Offset simplified abstract
- QUALCOMM Incorporated patent applications on September 12th, 2024
- QUALCOMM Incorporated patent applications on September 26th, 2024
- Quantum Error Correction patent applications on 14th Feb 2025
- Quantum Error Correction patent applications on February 13th, 2025
- Quantum Error Correction patent applications on January 23rd, 2025
R
S
- Samsung electronics co., ltd. (20240161850). MEMORY DEVICES AND ELECTRONIC DEVICES OUTPUTING EVENT DATA RELATED TO OCCURRENCES OF ERRORS AND OPERATING METHODS OF MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240212775). VOLATILE MEMORY DEVICES AND METHODS OF OPERATING SAME TO IMPROVE RELIABILITY simplified abstract
- Samsung electronics co., ltd. (20240212776). MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240212782). MEMORY CONTROLLER, AN OPERATION METHOD THEREOF, A MEMORY DEVICE, AND A MEMORY SYSTEM simplified abstract
- Samsung electronics co., ltd. (20240233850). WORDLINE DEFECT DETECTION CIRCUIT, WORDLINE DEFECT DETECTION METHOD, AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240233852). BIT COUNTING CIRCUITS AND MEMORY DEVICES INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240265987). MEMORY REPAIR CIRCUIT, A MEMORY REPAIR METHOD, AND A MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240274212). VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240282395). MEMORY DEVICE AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240290414). METHODS OF TESTING REPAIR CIRCUITS OF MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240296898). MEMORY DEVICE DETECTING DEFECT OF WORD LINE PATH AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240312551). NONVOLATILE MEMORY PACKAGE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THEREOF simplified abstract
- Samsung electronics co., ltd. (20240339168). MEMORY SYSTEMS HAVING MEMORY DEVICES THEREIN WITH ENHANCED ERROR CORRECTION CAPABILITY AND METHODS OF OPERATING SAME simplified abstract
- Samsung electronics co., ltd. (20250014664). STORAGE DEVICE DETERMINING DETERIORATION WORDLINE, AND METHOD OF OPERATING THE SAME
- Samsung electronics co., ltd. (20250022524). MEMORY DEVICE AND METHOD FOR CALIBRATING IMPEDANCE THEREOF
- Samsung electronics co., ltd. (20250061957). MEMORY DEVICE AND MEMORY TEST SYSTEM THEREOF
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 30th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 10th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 10th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 5th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 5th, 2024
- Sk hynix inc. (20240120014). TEST CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract
- Sk hynix inc. (20240120015). SEMICONDUCTOR DEVICE AND METHOD FOR PERFORMING TEST simplified abstract
- Sk hynix inc. (20240159818). APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT simplified abstract
- Sk hynix inc. (20240161851). TEST SYSTEMS CONFIGURED TO PERFORM TEST MODE OPERATIONS FOR MULTIPLE MEMORY DEVICES simplified abstract
- Sk hynix inc. (20240177791). SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240242773). TEST CIRCUIT AND RECEIVING CIRCUIT HAVING TEST FUNCTION simplified abstract
- Sk hynix inc. (20240304272). ELECTRONIC DEVICES RELATED TO COMPENSATION OF MONITORING SIGNALS simplified abstract
- Sk hynix inc. (20240420752). SEMICONDUCTOR SYSTEM FOR PERFORMING READ-MODIFY-WRITE OPERATION
- Sk hynix inc. (20250006291). TEST CIRCUIT AND SEMICONDUCTOR MEMORY SYSTEM INCLUDING THE TEST CIRCUIT
- Sk hynix inc. (20250069639). MEMORY AND OPERATION METHOD THEREOF
- SK hynix Inc. patent applications on April 11th, 2024