Western digital technologies, inc. (20240420767). VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE
VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE
Organization Name
western digital technologies, inc.
Inventor(s)
Jia Li of San Francisco CA (US)
Yihang Liu of Santa Clara CA (US)
VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE
This abstract first appeared for US patent application 20240420767 titled 'VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE
Original Abstract Submitted
the memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. the word lines are grouped in a plurality of layers. the memory device also includes circuitry that is configured to program the memory cells of a selected word line of the plurality of word lines. the circuitry is configured during programming to determine which layer of the plurality of layers the selected word line is located in. the circuitry is also configured to apply a programming voltage to the selected word line and apply pass voltages to a plurality of unselected word lines. for at least some of the unselected word lines, the pass voltage is a baseline pass voltage level that is adjusted by a layer-unique bias pass voltage.