United microelectronics corp. (20250017121). RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Wen-Jen Wang of Tainan City (TW)
Yu-Huan Yeh of Hsinchu City (TW)
Chuan-Fu Wang of Miaoli County (TW)
RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 20250017121 titled 'RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
a resistive memory structure including a substrate, a dielectric layer, a conductive plug, a resistive memory device, a spacer, and a protective layer is provided. the dielectric layer is located on the substrate. the conductive plug is located in the dielectric layer. the conductive plug has a protrusion portion located outside the dielectric layer. the resistive memory device is located on the conductive plug. the resistive memory device includes a first electrode, a variable resistance layer, and a second electrode. the first electrode is located on the conductive plug. the variable resistance layer is located on the first electrode. the second electrode is located on the variable resistance layer. the spacer is located on a sidewall of the resistive memory device. the protective layer is located on a sidewall of the protrusion portion and between the first electrode and the dielectric layer.