United microelectronics corp. (20250015183). METHOD OF FABRICATING SEMICONDUCTOR DEVICE
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shin-Hung Li of Nantou County (TW)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250015183 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a method of fabricating semiconductor device, the semiconductor device includes a substrate, a first transistor and a second transistor. the substrate includes a high-voltage region and a low-voltage region. the first transistor is disposed on the hv region, and includes a first gate dielectric layer disposed on a first base, and a first gate electrode on the first gate dielectric layer. the first gate dielectric layer includes a composite structure having a first dielectric layer and a second dielectric layer stacked sequentially. the second transistor is disposed on the lv region, and includes a fin shaped structure protruded from a second base on the substrate, and a second gate electrode disposed on the fin shaped structure. the first dielectric layer covers sidewalls of the second gate electrode and a top surface of the first dielectric layer is even with a top surface of the second gate electrode.