United microelectronics corp. (20250015161). SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Organization Name
Inventor(s)
Wei-Hsuan Chang of Tainan City (TW)
Ming-Hua Tsai of Tainan City (TW)
Chin-Chia Kuo of Tainan City (TW)
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
This abstract first appeared for US patent application 20250015161 titled 'SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Original Abstract Submitted
a semiconductor device includes a substrate; a channel region disposed in the substrate; and a diffusion region disposed in the substrate on a side of the channel region. the diffusion region comprises a ldd region and a heavily doped region within the ldd region. a gate electrode is disposed over the channel region. the gate electrode partially overlaps with the ldd region. a spacer is disposed on a sidewall of the gate electrode. a gate oxide layer is disposed between the gate electrode and the channel region, between the gate electrode and the ldd region, and between the spacer and the ldd region. a silicide layer is disposed on the heavily doped region and is spaced apart from the edge of the spacer.