United microelectronics corp. (20250015142). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Chih-Tung Yeh of Taoyuan City (TW)
Wen-Jung Liao of Hsinchu City (TW)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250015142 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a iii-v compound semiconductor layer, a iii-v compound barrier layer, a gate trench, a p-type doped iii-v compound layer, an insulation layer, and a gate electrode. the iii-v compound barrier layer is disposed on the iii-v compound semiconductor layer. the gate trench is disposed in the iii-v compound barrier layer. the p-type doped iii-v compound layer is disposed in the gate trench, and a top surface of the p-type doped iii-v compound layer and a top surface of the iii-v compound barrier layer are substantially coplanar. the insulation layer is disposed on the iii-v compound barrier layer. the insulation layer includes an opening located corresponding to the gate trench in a vertical direction. a part of the p-type doped iii-v compound layer is disposed on the insulation layer in the vertical direction. the gate electrode is disposed on the p-type doped iii-v compound layer.