Self-Aligned Structure For Semiconductor Devices

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

Shi Ning Ju of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Kuan-Ting Pan of Taipei City (TW)

Self-Aligned Structure For Semiconductor Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447922 titled 'Self-Aligned Structure For Semiconductor Devices

Simplified Explanation

- The patent application is about a semiconductor device and its manufacturing method. - The device includes self-aligned isolation structures, which are used to separate different components of the device. - These self-aligned isolation structures are formed by depositing dielectric material in openings or replacing portions of fins with dielectric material. - The separation between these self-aligned isolation structures is determined by the photolithography process used, and it is equal to or larger than the separation of the active fins. - The purpose of these self-aligned isolation structures is to improve the performance and functionality of the semiconductor device.

Original Abstract Submitted

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having self-aligned isolation structures. The present disclosure provides self-aligned isolation fins that can be formed by depositing dielectric material in openings formed in a spacing layer or by replacing portions of fins with dielectric material. The self-aligned isolation fins can be separated from each other by a critical dimension of the utilized photolithography process. The separation between self-aligned isolation fins or between the self-aligned isolation fins and active fins can be approximately equal to or larger than the separations of the active fins.