US Patent Application 18446582. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Feng-Ching Chu of Pingtung County (TW)]]

[[Category:Feng-Cheng Yang of Zhudong Township (TW)]]

[[Category:Katherine H. Chiang of New Taipei City (TW)]]

[[Category:Chung-Te Lin of Tainan City (TW)]]

[[Category:Chieh-Fang Chen of Hsinchu County (TW)]]

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446582 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor structure and a method for forming it.

• The semiconductor structure consists of a substrate and a dielectric stack.
• The dielectric stack is made up of a first layer and a second layer.
• The structure also includes a gate layer with two portions.
• One portion of the gate layer goes through the second layer.
• The other portion of the gate layer extends between the first layer and the second layer.

Original Abstract Submitted

The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.