MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362223 titled 'MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF

Simplified Explanation

The patent application describes a memory device that consists of multiple memory cells. Each memory cell is made up of an access transistor and a resistor connected in series. The resistors in the memory cells are formed as interconnect structures placed on top of a substrate. The access transistors of the memory cells are positioned opposite a first metallization layer that contains the interconnect structures.

Memory device with multiple memory cells
Each memory cell has an access transistor and a resistor in series
Resistors are interconnect structures on top of a substrate
Access transistors are located opposite a metallization layer containing the interconnect structures

Original Abstract Submitted

A memory device is disclosed. The memory device includes a plurality of memory cells, each of the memory cells including an access transistor and a resistor coupled to each other in series. The resistors of the memory cells are each formed as one of a plurality of interconnect structures disposed over a substrate. The access transistors of the memory cells are disposed opposite a first metallization layer containing the plurality of interconnect structures from the substrate.