US Patent Application 18361767. SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS simplified abstract

SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yen-Liang Chen of Hsinchu (TW)

SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361767 titled 'SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS

Simplified Explanation

The patent application describes a system and method for detecting the condition of a processing chamber used in semiconductor manufacturing.

• The system includes a step where a wafer-less processing is performed in the chamber to assess the condition of the chamber walls.
• By analyzing the residual gas produced during the wafer-less processing, an operator or process controller can determine if the chamber walls need to be cleaned.
• This method allows for proactive maintenance of the processing chamber, ensuring optimal performance and preventing potential issues caused by deteriorated chamber walls.

Original Abstract Submitted

The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a process controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.