GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361758 titled 'GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE

Simplified Explanation

The patent application describes gated MIS tunnel diode devices with controllable negative transconductance behavior.

The device includes a substrate, a tunnel diode dielectric layer, and a gate dielectric layer.
A tunnel diode electrode and a gate electrode are positioned on the respective dielectric layers.
A substrate electrode is also present on the substrate surface.
The tunnel diode electrode is located between the gate electrode and the substrate electrode.
The device allows for control over the negative transconductance behavior.

Original Abstract Submitted

Gated MIS tunnel diode devices having a controllable negative transconductance behavior are provided. In some embodiments, a device includes a substrate, a tunnel diode dielectric layer on a surface of the substrate, and a gate dielectric layer on the surface of the substrate and adjacent to the tunnel diode dielectric layer. A tunnel diode electrode is disposed on the tunnel diode dielectric layer, and a gate electrode is disposed on the gate dielectric layer. A substrate electrode is disposed on the surface of the substrate, and the tunnel diode electrode is positioned between the gate electrode and the substrate electrode.