METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359900 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor structure.

A first substrate with a top surface is received.
A semiconductor layer is formed over the first substrate.
A cavity is formed at the top surface of the semiconductor layer.
A second substrate is bonded over the first substrate to cover the semiconductor layer.
The second substrate has a through hole connected to the cavity of the semiconductor layer.
A eutectic sealing structure is formed on the second substrate to cover the through hole.
The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.

Original Abstract Submitted

A method for manufacturing a semiconductor structure is provided. The method includes the operations as follows. A first substrate having a top surface is received. A semiconductor layer is formed over the first substrate. A cavity is formed at the top surface of the semiconductor layer. A second substrate is bonded over the first substrate to cover the semiconductor layer. The second substrate has a through hole connected to the cavity of the semiconductor layer. A eutectic sealing structure is formed on the second substrate to cover the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.