INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354377 titled 'INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a method of forming an integrated circuit.

The method involves forming a set of devices in a substrate and then creating an interconnect structure over these devices.
A set of conductive structures is then deposited on the interconnect structure.
The devices in the circuit are designed to operate on a specific supply voltage.
The interconnect structure is formed by depositing insulating layers, etching them to create trenches, and filling these trenches with a conductive material to form metal layers.
A header circuit is also formed between two metal layers, which is responsible for providing the supply voltage to the devices in the circuit.

Original Abstract Submitted

A method of forming an integrated circuit includes forming at least a first or a second set of devices in a substrate, forming an interconnect structure over the first or second set of devices, and depositing a set of conductive structures on the interconnect structure. The first and second set of devices are configured to operate on a first supply voltage. Forming the interconnect structure includes depositing a set of insulating layers over the first or second set of devices, etching the set of insulating layers thereby forming a set of trenches, depositing a conductive material within the set of trenches, thereby forming a set of metal layers, and forming a portion of a header circuit between a first and a second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices.