US Patent Application 18232717. PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract
PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
An-Ren Zi of Hsinchu City (TW)
Chin-Hsiang Lin of Hsinchu (TW)
Ching-Yu Chang of Yuansun Village (TW)
PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232717 titled 'PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device using a specific type of photoresist composition.
- The method involves applying a photoresist under-layer composition over a semiconductor substrate.
- A photoresist layer composition is then applied over the photoresist under-layer.
- The photoresist layer is selectively exposed to actinic radiation and developed to create a pattern.
- The photoresist under-layer composition includes a polymer with acid-labile groups, a polymer with crosslinking groups, or a polymer with carboxylic acid groups.
- It also includes an acid generator and a solvent.
- The photoresist composition includes a polymer, a photoactive compound, and a solvent.
- This method allows for precise patterning of the semiconductor device during manufacturing.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a photoresist under-layer including a photoresist under-layer composition over a semiconductor substrate, and forming a photoresist layer including a photoresist composition over the photoresist under-layer. The photoresist layer is selectively exposed to actinic radiation and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist under-layer composition includes a polymer having pendant acid-labile groups, a polymer having crosslinking groups or a polymer having pendant carboxylic acid groups, an acid generator, and a solvent. The photoresist composition includes a polymer, a photoactive compound, and a solvent.
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