APPARATUS FOR ELECTRO-CHEMICAL PLATING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Kuo-Lung Hou of Taichung City (TW)]]

[[Category:Ming-Hsien Lin of Taichung City (TW)]]

APPARATUS FOR ELECTRO-CHEMICAL PLATING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231196 titled 'APPARATUS FOR ELECTRO-CHEMICAL PLATING

Simplified Explanation

The abstract describes an electrochemical plating apparatus used for removing the edge bevel of a wafer during the manufacturing process.

The apparatus includes a cell chamber with two or more nozzles positioned near the edge of the wafer.
Each nozzle is equipped with a flow regulator that controls the width of the deposited film flowing out of the nozzle.
A controller is used to regulate the flow regulator and ensure that the deposited film has a predetermined surface profile.
The nozzles are placed in different positions above the wafer, either radially or angularly.

Original Abstract Submitted

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate a tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.