US Patent Application 17825252. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE simplified abstract
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE
Organization Name
Inventor(s)
YIN-FA Chen of NEW TAIPEI CITY (TW)
JUI-HSIU Jao of TAOYUAN CITY (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825252 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device.
- The method involves creating a substrate with two islands, one larger than the other.
- An insulative layer is then deposited to cover the substrate.
- A storage node contact and a conductive feature are formed, with the storage node contact in contact with the smaller island and the conductive feature in contact with the larger island.
- Finally, a conductive line is formed on the insulative layer and connected to the conductive feature.
Original Abstract Submitted
The present application provides a method of manufacturing a semiconductor device. The method includes steps of forming a substrate comprising a first island and a second island, wherein the first island has a first area, and the second island has a second area greater than the first area; depositing an insulative layer to cover the substrate; forming a storage node contact and a conductive feature penetrating through the insulative layer, wherein the storage node contact is in contact with the first island and the conductive feature is in contact with the second island; and forming a conductive line on the insulative layer and connected to the conductive feature.
