Tokyo electron limited (20250149342). ETCHING METHOD AND PLASMA PROCESSING APPARATUS
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Hikoichiro Sasaki of Miyagi JP
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 20250149342 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
an etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative dc voltage to the substrate support.