Tokyo electron limited (20250133743). FERROELECTRIC 3D MEMORY BLOCK UNIT
FERROELECTRIC 3D MEMORY BLOCK UNIT
Organization Name
Inventor(s)
Partha Mukhopadhyay of Oviedo FL US
Henry Jim Fulford of Albany NY US
Mark I. Gardner of Albany NY US
FERROELECTRIC 3D MEMORY BLOCK UNIT
This abstract first appeared for US patent application 20250133743 titled 'FERROELECTRIC 3D MEMORY BLOCK UNIT
Original Abstract Submitted
fefet memory devices are provided. a semiconductor device includes a first metal structure of a first gate electrode. the semiconductor device includes a gate dielectric structure extending along a bottom surface of the first metal structure and surrounding a sidewall of the first metal structure. the semiconductor device includes a semiconductor-behaving structure extending along a bottom surface of the gate dielectric structure and surrounding a sidewall of the gate dielectric structure. the semiconductor device includes a ferroelectric structure surrounding a sidewall of the semiconductor-behaving structure. the semiconductor device includes a second gate electrode comprising a second metal structure in contact with the semiconductor-behaving structure.