Tokyo electron limited (20250133741). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE AND METHODS OF FABRICATING THE SAME
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE AND METHODS OF FABRICATING THE SAME
Organization Name
Inventor(s)
Partha Mukhopadhyay of Oviedo FL US
Henry Jim Fulford of Albany NY US
Mark I. Gardner of Albany NY US
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE AND METHODS OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250133741 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE AND METHODS OF FABRICATING THE SAME
Original Abstract Submitted
a semiconductor device includes a first gate structure, a second gate structure, and a semiconductor layer. the first gate structure, the semiconductor layer, and the second gate structure are arranged concentrically. the first gate structure includes a first gate electrode and a ferroelectric layer. the second gate structure includes a second gate electrode and a gate dielectric layer. the semiconductor layer is disposed between the ferroelectric layer and the gate dielectric layer.