Tokyo electron limited (20250129479). FILM-FORMING METHOD AND FILM-FORMING SYSTEM
FILM-FORMING METHOD AND FILM-FORMING SYSTEM
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FILM-FORMING METHOD AND FILM-FORMING SYSTEM
This abstract first appeared for US patent application 20250129479 titled 'FILM-FORMING METHOD AND FILM-FORMING SYSTEM
Original Abstract Submitted
a film-forming method for forming a film on a substrate, the film-forming method includes: (a) forming a film on a substrate by a first film-forming apparatus, and (b) moving the substrate provided with the film formed in the (a) to a second film-forming apparatus different from the first film-forming apparatus and forming a film over the substrate by the second film-forming apparatus. in the (b), the substrate is rotated inside a process chamber, one of the substrate or a nozzle gas discharge mechanism is moved relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and a processing gas is discharged from the discharge hole toward the substrate, thereby adjusting a film thickness of the film to be formed over the substrate.