Tokyo electron limited (20250129472). FILM-FORMING METHOD AND FILM-FORMING APPARATUS
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
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FILM-FORMING METHOD AND FILM-FORMING APPARATUS
This abstract first appeared for US patent application 20250129472 titled 'FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Original Abstract Submitted
a film-forming method for forming a film on a substrate includes (a) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and discharging a processing gas toward the substrate from the discharge hole; and (b) changing a discharge condition of the processing gas from that in (a), and adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging the processing gas toward the substrate from the discharge hole.