SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT

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SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240341101 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT

The abstract describes methods and devices for electronic devices, such as memory elements, incorporating a gate structure that can function as a storage capacitor for a memory element.

The device includes a first layer with a source region, a drain region, and a channel between them, along with a gate dielectric, a first conductor, a ferroelectric layer, and a second conductor material.
The gate structure can be utilized as a storage capacitor for a memory element, enhancing the device's memory capabilities.

Potential Applications:

This technology can be applied in memory devices, such as non-volatile memory elements, to improve storage capacity and performance.

Problems Solved:

Enhances memory capabilities by utilizing the gate structure as a storage capacitor, increasing the efficiency of memory devices.

Benefits:

Improved memory capacity and performance in electronic devices.
Enhanced storage capabilities for memory elements.

Commercial Applications:

Potential commercial applications include the development of advanced memory devices for consumer electronics, data storage systems, and computing devices.

Prior Art:

Researchers can explore prior art related to ferroelectric memory elements and storage capacitors in electronic devices to understand the evolution of this technology.

Frequently Updated Research:

Stay updated on advancements in ferroelectric memory technology and storage capacitor design to leverage the latest innovations in electronic device memory capabilities.

Questions about the Technology: 1. How does the gate structure function as a storage capacitor for the memory element? 2. What are the potential implications of utilizing ferroelectric materials in memory devices?

Original Abstract Submitted

methods and devices are described for electronic devices, such as memory elements. in some implementations, the device may include a first layer including a source region, a drain region and a channel between the source region and drain region, the source and drain being in the same or different plane than at least a portion of the channel. in addition, the device may include a gate dielectric on the first layer and in contact with the channel, a first conductor on the gate dielectric, a ferroelectric layer on the first conductor, and a second conductor material on the ferroelectric layer. the gate structure may be utilized as a storage capacitor for a memory element.