Tokyo electron limited (20240243006). SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES simplified abstract
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Scott Lefevre of Albany NY (US)
Arkalgud Sitaram of Albany NY (US)
Panupong Jaipan of Albany NY (US)
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243006 titled 'SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES
The abstract describes a method involving a silicon on insulator (SOI) substrate with a first semiconductor layer, a buried oxide layer, and a second semiconductor region with recesses for accommodating semiconductor dies.
- Simplified Explanation: The method involves using a specialized substrate to bond semiconductor dies through recesses in the second semiconductor region.
- Key Features and Innovation:
- Utilizes a silicon on insulator (SOI) substrate - Second semiconductor region with recesses for accommodating semiconductor dies - Bonding of semiconductor dies to the buried oxide layer through the recesses
- Potential Applications:
- Semiconductor manufacturing - Integrated circuit fabrication - Microelectronics industry
- Problems Solved:
- Efficient bonding of semiconductor dies - Enhanced semiconductor device performance - Improved reliability in semiconductor manufacturing
- Benefits:
- Increased device integration - Enhanced device performance - Improved reliability and durability
- Commercial Applications:
- Semiconductor fabrication industry - Electronics manufacturing sector - Research and development in microelectronics
- Prior Art:
- Prior research on SOI substrates and semiconductor bonding techniques - Studies on semiconductor device performance and reliability
- Frequently Updated Research:
- Ongoing advancements in semiconductor manufacturing techniques - Research on novel materials for semiconductor devices
Questions about the technology: 1. How does the use of a silicon on insulator (SOI) substrate impact semiconductor device performance? 2. What are the potential challenges in bonding semiconductor dies through recesses in the second semiconductor region?
Original Abstract Submitted
in some implementations, a method may include providing a silicon on insulator (soi) substrate having a first semiconductor layer, a buried oxide layer over the first semiconductor region, and a second semiconductor region over the buried oxide, the second semiconductor region having a plurality of recesses exposing the underlying buried oxide, each recess having a shape and size configured to accommodate a die. in addition, the device may include bonding a plurality of semiconductor dies to the buried oxide through the plurality of recesses.
