Tokyo Electron Limited patent applications on May 8th, 2025
Patent Applications by Tokyo Electron Limited on May 8th, 2025
Tokyo Electron Limited: 22 patent applications
Tokyo Electron Limited has applied for patents in the areas of H01J37/32 (14), H01L21/67 (4), C23C16/455 (2), H01L21/3065 (2), B05D1/00 (1) H01J37/32174 (4), H01J37/32091 (2), H01J37/32651 (2), H01J37/32926 (2), B05D1/62 (1)
With keywords such as: processing, substrate, power, plasma, chamber, apparatus, support, coil, film, and container in patent application abstracts.
Patent Applications by Tokyo Electron Limited
20250144667. SUBSTRATE-PROCESSING METHOD_simplified_abstract_(tokyo electron limited)
Inventor(s): Daisuke OBA of Albany NY US for tokyo electron limited, Nobuo MATSUKI of Yamanashi JP for tokyo electron limited, Yoshinori MORISADA of Yamanashi JP for tokyo electron limited
IPC Code(s): B05D1/00
CPC Code(s): B05D1/62
Abstract: a substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.
20250144892. BONDING METHOD AND BONDING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Hirokazu UEDA of Osaka City JP for tokyo electron limited, Kenji SEKIGUCHI of Nirasaki City JP for tokyo electron limited, Mitsuaki IWASHITA of Nirasaki City JP for tokyo electron limited
IPC Code(s): B29C65/48
CPC Code(s): B29C65/4855
Abstract: a bonding method includes a first operation of preparing a first substrate having a first surface and a second substrate having a second surface, each of the first surface and the second surface having a first region in which an insulating film is exposed and a second region in which a conductive film is exposed, a second operation of applying an ionic liquid to at least one of the first surface of the first substrate or the second surface of the second substrate, and a third operation of bonding the first surface of the first substrate and the second surface of the second substrate with the ionic liquid.
Inventor(s): Masahide Tadokoro of Koshi City JP for tokyo electron limited, Masashi Enomoto of Koshi City JP for tokyo electron limited, Toyohisa Tsuruda of Koshi City JP for tokyo electron limited, Hiroshi Nakamura of Koshi City JP for tokyo electron limited, Kazuhiro Shiba of Koshi City JP for tokyo electron limited
IPC Code(s): G01B11/06, H01L21/67
CPC Code(s): G01B11/0616
Abstract: an information processing apparatus includes a prediction unit configured to calculate, based on a film thickness model representing a relationship between a state of a substrate processing apparatus and a film thickness of a coating film formed on a front surface of a substrate by the substrate processing apparatus and pre-data representing the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, a predicted film thickness when the substrate is processed by the substrate processing apparatus; and an output unit configured to output, based on the predicted film thickness, instruction information on a processing of the substrate before the substrate is processed by the substrate processing apparatus.
Inventor(s): Jun TAMURA of Miyagi JP for tokyo electron limited, Tsuyoshi MORIYA of Tokyo JP for tokyo electron limited, Yuki KATAOKA of Sapporo City JP for tokyo electron limited, Akira IMAKURA of Ibaraki JP for tokyo electron limited, Tetsuya SAKURAI of Ibaraki JP for tokyo electron limited, Yasunori FUTAMURA of Ibaraki JP for tokyo electron limited, Xiucai YE of Ibaraki JP for tokyo electron limited
IPC Code(s): G05B19/418
CPC Code(s): G05B19/41885
Abstract: an information processing method, an information processing system, and a recording medium are provided. a computer executes processing of: acquiring, from apparatuses, first intermediate representations obtained by applying an intermediate representation conversion function to first data individually used by the apparatuses, acquiring, from the apparatuses, second intermediate representations obtained by applying the intermediate representation conversion function to second data commonly used by the apparatuses, adjusting parameters of an integrated representation conversion function to minimize a difference in integrated representations obtained by applying the integrated representation conversion function to the second intermediate representations acquired from the apparatuses, and deriving an apparatus difference correction function for correcting an apparatus difference between the apparatuses based on each of the first intermediate representations acquired from the apparatuses and the integrated representation conversion function for which the parameters are adjusted.
20250149291. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Hiroyuki MATSUURA of Iwate JP for tokyo electron limited, Takeshi KOBAYASHI of Iwate JP for tokyo electron limited, Takahiro SHINDO of Tokyo JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32091
Abstract: a plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and holds a plurality of substrates in a plurality of tiers, a rotating shaft capable of rotating the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhaust unit that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container and positioned to face each other with respect to a center of the processing container, and a radio-frequency power supply that applies a radio-frequency power to the pair of the electrodes, thereby generating a capacitively-coupled plasma in the processing container. the substrate holder includes a ring member that holds a substrate, and surrounds a radial outer side of the substrate in a plan view.
20250149292. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Hiroyuki MATSUURA of Iwate JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32091
Abstract: a plasma processing apparatus includes a processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhaust unit that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container and positioned to face each other, a radio-frequency power supply that applies a radio-frequency power to the pair of the electrodes, thereby generating a capacitively-coupled plasma in the processing container, an inner tube provided in the processing container and having an opening, a substrate holder that is inserted into the inner tube and holds a plurality of substrates, a rotating shaft that supports the substrate holder, a rotation mechanism that rotates the rotating shaft, and an elevation mechanism that raises or lowers the rotating shaft. the substrate holder includes a ring member that holds a substrate, and surrounds a radial outer side of the substrate in a plan view.
Inventor(s): Alok Ranjan of Austin TX US for tokyo electron limited, Peter Ventzek of Austin TX US for tokyo electron limited, Mitsunori Ohata of Taiwa-cho JP for tokyo electron limited
IPC Code(s): H01J37/32, C23C16/455, H01L21/3065, H01L21/67, H01L21/683
CPC Code(s): H01J37/32146
Abstract: a plasma processing apparatus includes a plasma processing chamber, a source power (sp) control path configured to generate a plasma in the processing chamber by generating sp pulses according to sp pulse parameters, and a timing circuit coupled to the sp control path. the timing circuit is configured to generate a delay causing a nonzero offset duration separating trailing edges of the sp pulses and leading edges of bias power (bp) pulses, and to output a trigger signal immediately following the nonzero offset duration. the plasma processing apparatus further includes a bp control path coupled to the timing circuit and configured to generate bp pulses triggered by the trigger signal and to couple the bp pulses to a substrate disposed in the processing chamber. the bp pulses are generated according to bp pulse parameters that are separate from the sp pulse parameters.
Inventor(s): Chishio KOSHIMIZU of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32165
Abstract: a plasma processing apparatus includes a chamber, a substrate support, a gas supplier for supplying gas into the chamber, a radio-frequency power supply for supplying a source radio-frequency power to generate plasma, and a bias power supply for generating electric bias. during a first processing period, the radio-frequency power supply uses frequencies, which are included in a first frequency set determined to reduce a degree of reflection of the source radio-frequency power from a load, as source frequencies of the source radio-frequency power for each of phase periods in a waveform period of the electric bias. during a second processing period, the radio-frequency power supply uses frequencies, which are included in a second frequency set different from the first frequency set and determined to reduce the degree of reflection, as the source frequencies for each of the phase periods.
Inventor(s): Nozomu NAGASHIMA of Miyagi JP for tokyo electron limited, Daisuke YOSHIKOSHI of Miyagi JP for tokyo electron limited, Kunihiko YAMAGATA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: a plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, a ground frame, an electricity storage unit, a rectifying and smoothing unit, a power feeding output connector, and a power receiving coil. the rectifying and smoothing unit includes a power feeding input connector comprising a first power feeding input terminal and a second power feeding input terminal, and a rectifying circuit comprising a diode bridge. the power feeding output connector comprises a first feeding output terminal and a second power feeding output terminal which are electrically connectable to the first power feeding input terminal and the second power feeding input terminal. the power receiving coil is electrically connected to the power feeding output connector, and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.
20250149298. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Nozomu NAGASHIMA of Miyagi JP for tokyo electron limited, Daisuke YOSHIKOSHI of Miyagi JP for tokyo electron limited, Kunihiko YAMAGATA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: a plasma processing apparatus comprises a plasma processing chamber, a substrate support, an electrode or an antenna, a high frequency power supply, a consuming member, an electricity storage unit and a power receiving coil. the electrode or an antenna is disposed such that a space within the plasma processing chamber is located between the electrode or the antenna and the substrate support. the high frequency power supply is configured to generate high frequency power and is electrically connected to the substrate support, the electrode or the antenna. the power consuming member is disposed within the plasma processing chamber or the substrate support. the electricity storage unit is electrically connected to the power consuming member. the power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.
Inventor(s): Takayuki KATSUNUMA of Miyagi JP for tokyo electron limited, Masanobu HONDA of Miyagi JP for tokyo electron limited, Tetsuya NISHIZUKA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: the plasma processing system includes a plasma processing device, an assistance device, and a control device, in which the assistance device includes a first determination unit for determining, using a first machine learning model, a plurality of control parameters for processing a pre-processing substrate so that a predicted shape of the post-processing substrate conforms a required shape of the post-processing substrate based on a first input related to a structure of the pre-processing substrate, a second input related to a required shape of the post-processing substrate, a third input related to a specification of the plasma processing device, and a fourth input related to a state of the plasma processing device, and a second determination 10 unit for determining an operating condition of the plasma processing device using a second machine learning model, based on the plurality of determined control parameters, the third input, and the fourth input.
Inventor(s): Tangkuei WANG of Miyagi JP for tokyo electron limited, Tetsuya OHISHI of Miyagi JP for tokyo electron limited, Masafumi URAKAWA of Miyagi JP for tokyo electron limited, Shinya MORIKITA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: in a plasma processing apparatus disclosed, a controller performs repetition of a cycle. the cycle includes supplying a pulse of a source high-frequency power from a high-frequency power supply for generating plasma from gas in a chamber, and supplying a pulse of an electric bias to a substrate support from a bias power supply. the pulse of the electric bias includes a direct current voltage pulse periodically generated at a bias frequency of 1 mhz or less. a repetition frequency of the cycle is 5 khz or more. a start timing of the pulse of the electric bias is simultaneous with or earlier than a stop timing of the pulse of the source high-frequency power. a stop timing of the pulse of the electric bias is later than the stop timing of the pulse of the source high-frequency power.
20250149307. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Nozomu NAGASHIMA of Miyagi JP for tokyo electron limited, Daisuke YOSHIKOSHI of Miyagi JP for tokyo electron limited, Kunihiko YAMAGATA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32651
Abstract: provided is a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; a high frequency power supply; an electrode or an antenna electrically connected to the high frequency power supply; a power consuming member disposed within the plasma processing chamber or the substrate support; an electricity storage unit electrically connected to the power consuming member; a power transmitting coil provided outside the plasma processing chamber; a power receiving coil electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil; at least one metal case that provides a shielded space and accommodates the power transmitting coil and the power receiving coil within the shielded space; and at least one ferrite material that is disposed within the shielded space and is provided to close a space in which the power transmitting coil and the power receiving coil are disposed.
20250149308. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Nozomu NAGASHIMA of Miyagi JP for tokyo electron limited, Daisuke YOSHIKOSHI of Miyagi JP for tokyo electron limited, Kunihiko YAMAGATA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32651
Abstract: a plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, an electricity storage unit, a power transmitting coil, a power receiving coil and at least one driving system. the power transmitting coil is provided outside the plasma processing chamber. the power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil by electromagnetic induction coupling. the at least one driving system is configured to change a distance between the power transmitting coil and the power receiving coil by moving at least one of the power transmitting coil and the power receiving coil.
Inventor(s): Hiroki SATO of Miyagi JP for tokyo electron limited, Yuki KAWADA of Miyagi JP for tokyo electron limited, Akihiro YOKOTA of Miyagi JP for tokyo electron limited
IPC Code(s): H01J37/32, H01F7/08
CPC Code(s): H01J37/3266
Abstract: a plasma processing apparatus disclosed herein includes a chamber, a substrate support, a plasma generator, at least one electromagnet, and a power source. the substrate support is provided in the chamber. the substrate support includes a first region on which a substrate is placeable and a second region which surrounds the first region and on which an edge ring is placed. the plasma generator is configured to generate a plasma in the chamber. the at least one electromagnet is configured to generate a magnetic field localized in an annular space above the edge ring. the power source is electrically connected to the at least one electromagnet and is configured to adjust a strength of the magnetic field.
Inventor(s): Naoki MATSUMOTO of Miyagi JP for tokyo electron limited, Toshihisa OZU of Miyagi JP for tokyo electron limited, Satoru NAKAMURA of Miyagi JP for tokyo electron limited, Yusuke SHIMIZU of Gyeonggi-do KR for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32926
Abstract: an adjustment method includes: acquiring reference distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a first chamber and a substrate placed at a first substrate support disposed in the first chamber in a first plasma processing apparatus including the first chamber and the first substrate support; acquiring distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a second chamber and a substrate placed at a second substrate support disposed in the second chamber in a second plasma processing apparatus including the second chamber and the second substrate support; and adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.
Inventor(s): Naoki MATSUMOTO of Miyagi JP for tokyo electron limited, Toshihisa OZU of Miyagi JP for tokyo electron limited, Satoru NAKAMURA of Miyagi JP for tokyo electron limited, Yusuke SHIMIZU of Gyeonggi-do KR for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32926
Abstract: a technology for reducing variation in an ion flux distribution will be provided. there is provided a plasma processing method for performing plasma processing in a plasma processing apparatus including a chamber and a substrate support disposed in the chamber, the plasma processing performed on a substrate placed at the substrate support by generating plasma in the chamber. the plasma processing method includes: (a) the step of storing, in memory, first distribution data that is data relating to a distribution of an ion flux that occurs between the plasma generated in the chamber and a first substrate placed at the substrate support; (b-a) the step of placing a second substrate at the substrate support; and (b-b) a plasma processing step of generating the plasma in the chamber based on the first distribution data to perform the plasma processing on the second substrate.
Inventor(s): Ryota IFUKU of Yamanashi JP for tokyo electron limited, Takashi MATSUMOTO of Yamanashi JP for tokyo electron limited, Hiroki YAMADA of Yamanashi JP for tokyo electron limited
IPC Code(s): H01L21/02, C23C16/455
CPC Code(s): H01L21/02274
Abstract: a substrate processing method includes: a preparation process of preparing a substrate having an underlying layer; a first process of forming a first graphene film, which has a first stress, on the underlying layer; a second process of forming a second graphene film, which has a second stress different from the first stress, on the first graphene film; and a third process of forming a third graphene film, which has a third stress different from the second stress, on the second graphene film.
Inventor(s): Kandabara Tapily of Albany NY US for tokyo electron limited, Eric Chih-Fang Liu of Albany NY US for tokyo electron limited, Lior Huli of Albany NY US for tokyo electron limited
IPC Code(s): H01L21/027, G03F7/11, G03F7/40, H01L21/033
CPC Code(s): H01L21/0274
Abstract: embodiments of methods are provided herein to form an extreme ultra-violet (euv) photoresist pattern on a semiconductor substrate using a multilayer photoresist film stack. the disclosed embodiments begin by forming a multilayer photoresist film stack including a plurality of relatively thin photoresist film layers, each layer comprising a different photoresist material. after euv exposure, the disclosed embodiments selectively develop the different photoresist layers in separate different development steps. in doing so, the process flows and methods disclosed herein increase the resist film thickness and improve development selectivity to avoid the photoresist damage and photoresist pattern collapse that often occurs during conventional euv lithography processes.
Inventor(s): Koki CHINO of Miyagi JP for tokyo electron limited, Hikoichiro SASAKI of Miyagi JP for tokyo electron limited
IPC Code(s): H01L21/311, H01J37/32, H01L21/3065
CPC Code(s): H01L21/31116
Abstract: an etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative dc voltage to the substrate support.
Inventor(s): Gentaro GOSHI of Kumamoto JP for tokyo electron limited
IPC Code(s): H01L21/67
CPC Code(s): H01L21/67023
Abstract: a controller of a substrate processing apparatus executes: a first process in which a processing fluid is supplied to a processing container in a first period until a pressure in the processing container is increased and the processing fluid in the processing container reaches a supercritical state; a second process in which the processing fluid is supplied to the processing container at a flow rate larger than a flow rate of the processing fluid supplied to the first fluid ejector in the first process, in a second period; and a density adjustment process in which after ending of the first process and before starting of the second process, the density adjustment mechanism makes a difference between a density of the processing fluid present in the upstream region of a second opening/closing valve and a density of the processing fluid present in the processing container smaller than a predetermined threshold.
Inventor(s): Susumu HAYAKAWA of Kikuchi-gun, Kumamoto JP for tokyo electron limited, Junichi KITANO of Tokyo JP for tokyo electron limited, Kenji SEKIGUCHI of Nirasaki-shi, Yamanashi JP for tokyo electron limited, Syuhei YONEZAWA of Nirasaki-shi, Yamanashi JP for tokyo electron limited, Yoshihiro KONDO of Koshi-shi, Kumamoto JP for tokyo electron limited
IPC Code(s): H01L21/67, H01L21/677
CPC Code(s): H01L21/67132
Abstract: a substrate processing apparatus includes a substrate cleaning device; a chip cleaning device; a chip bonding device; a transfer section; a first substrate transfer arm; and a first frame transfer arm. the substrate cleaning device is configured to clean a substrate. the chip cleaning device is configured to clean chips in a state where the chips are attached to a frame via a tape. the chip bonding device is configured to bond the chips to the substrate. the first substrate transfer arm is configured to hold and transfer the substrate. the first frame transfer arm is configured to hold and transfer the frame together with the chips. the first substrate transfer arm transfers the substrate from the substrate cleaning device to the chip bonding device, and the first frame transfer arm transfers the chips together with the frame from the chip cleaning device to the chip bonding device.
- Tokyo Electron Limited
- B05D1/00
- CPC B05D1/62
- Tokyo electron limited
- B29C65/48
- CPC B29C65/4855
- G01B11/06
- H01L21/67
- CPC G01B11/0616
- G05B19/418
- CPC G05B19/41885
- H01J37/32
- CPC H01J37/32091
- C23C16/455
- H01L21/3065
- H01L21/683
- CPC H01J37/32146
- CPC H01J37/32165
- CPC H01J37/32174
- CPC H01J37/32651
- H01F7/08
- CPC H01J37/3266
- CPC H01J37/32926
- H01L21/02
- CPC H01L21/02274
- H01L21/027
- G03F7/11
- G03F7/40
- H01L21/033
- CPC H01L21/0274
- H01L21/311
- CPC H01L21/31116
- CPC H01L21/67023
- H01L21/677
- CPC H01L21/67132
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