Tokyo Electron Limited patent applications on February 6th, 2025
Patent Applications by Tokyo Electron Limited on February 6th, 2025
Tokyo Electron Limited: 26 patent applications
Tokyo Electron Limited has applied for patents in the areas of H01J37/32 (6), H01L21/67 (6), C23C16/52 (3), H01L21/687 (3), H01L21/3065 (3) H01L21/3065 (2), C23C16/308 (1), H01J37/32853 (1), H01L22/26 (1), H01L21/68785 (1)
With keywords such as: substrate, processing, gas, layer, apparatus, part, configured, including, film, and target in patent application abstracts.
Patent Applications by Tokyo Electron Limited
Inventor(s): Kazumi KUBO of Iwate (JP) for tokyo electron limited
IPC Code(s): C23C16/30, C23C16/455, C23C16/458, C23C16/56
CPC Code(s): C23C16/308
Abstract: a film-forming method for forming a titanium oxynitride film on a substrate includes: (a) supplying a titanium-containing gas to the substrate; and (b) supplying an oxidizing gas to the substrate to which the titanium-containing gas is supplied, and supplying a shape control gas to an area same as that to which the oxidizing gas is supplied, thereby adjusting a shape of the titanium oxynitride film.
Inventor(s): Yohei MATSUYAMA of Yamanashi (JP) for tokyo electron limited, Daichi ITO of Yamanashi (JP) for tokyo electron limited, Takeshi OYAMA of Miyagi (JP) for tokyo electron limited
IPC Code(s): C23C16/34, C23C16/455, C23C16/52
CPC Code(s): C23C16/345
Abstract: a film deposition method includes forming a seed layer containing silicon atoms and nitrogen atoms on a metal film of a substrate by supplying a first silicon-containing gas and a first nitriding gas to the substrate in a state where the substrate is maintained at a first temperature; and forming a bulk layer containing silicon atoms and nitrogen atoms on the seed layer by supplying a second silicon-containing gas and a second nitriding gas to the substrate in a state where the substrate is maintained at a second temperature greater than the first temperature.
Inventor(s): Tsutomu HIROKI of Nirasaki City (JP) for tokyo electron limited
IPC Code(s): F16K27/02, F16K25/02, F16K49/00, H01L21/67
CPC Code(s): F16K27/0254
Abstract: a valve device includes: a valve body configured to cause an opening through which a fluid passes to be in a closed state by moving close to the opening and cause the opening to be in an open state by moving away from the opening in the closed state; first and second extension/contraction portions configured to be extendible in a direction of a central axis of a first flow path according to movement of the valve body; an intermediate portion disposed between the first extension/contraction portion and the second extension/contraction portion; and a driver connected to the intermediate portion on an outside of the first extension/contraction portion and the second extension/contraction portion and configured to drive the valve body so as to move the valve body together with the intermediate portion in the direction between the open and the closed states.
Inventor(s): Yuichi ASAHI of Tokyo (JP) for tokyo electron limited, Takuya SEINO of Gyeonggi-do (KR) for tokyo electron limited
IPC Code(s): G03F7/00, G03F7/16, G03F7/20, H01L21/67
CPC Code(s): G03F7/70141
Abstract: a substrate processing method includes: (a) applying a resist liquid on a substrate to form a resist film, (b) performing auxiliary exposure processing of irradiating the resist film with light having a desired wavelength, separately from exposure processing of transferring a pattern of a mask onto the resist film, (c) supplying a developer to the resist film after the exposure processing and the auxiliary exposure processing to form a resist pattern, (d) etching an etching target layer on the substrate using the resist pattern as a mask, and (e) correcting an in-plane distribution of an exposure amount in the auxiliary exposure processing in (b), and performing the correction based on a result of (d) when (a) to (d) are performed under conditions before the correction.
Inventor(s): Toshiaki Odaka of Kikuchi-gun (JP) for tokyo electron limited
IPC Code(s): G03F7/00
CPC Code(s): G03F7/70991
Abstract: a substrate processing apparatus includes a dry lithography device configured to perform a lithography process on a substrate mainly by a gas; and a connector configured to connect the dry lithography device to an exposurer configured to expose the substrate. the connector includes a transfer space which is adjacent to an exposure space of the exposurer and through which the substrate is transferred between the exposurer and the dry lithography device.
Inventor(s): Ryoji ANZAKI of Sapporo City (JP) for tokyo electron limited
IPC Code(s): G05B23/02
CPC Code(s): G05B23/0281
Abstract: provided is a state detection apparatus, a state detection method, a generation method of a learning model, and a recording medium, which can be expected to accurately detect a state of a target apparatus such as a semiconductor manufacturing apparatus. the state detection apparatus according to the present embodiment includes: a first acquirer that acquires input data of a target apparatus and observed data of an operation of the target apparatus; a determinator that determines parameters of an estimation model that estimates the observed data from the input data based on the input data and the observed data acquired by the first acquirer; and a detector that detects a state of the target apparatus based on the parameters determined by the determinator.
Inventor(s): Masahiro YANAGISAWA of Yamanashi (JP) for tokyo electron limited
IPC Code(s): G06N20/00
CPC Code(s): G06N20/00
Abstract: an information processing apparatus includes a model acquisition unit that acquires a learned model that has learned a relationship between first log information measured during a processing in a first substrate processing apparatus and a first process result indicating a state of a processing target after the processing; a data acquisition unit that acquires second log information measured during a processing in a second substrate processing apparatus and a second process result indicating a state of a processing target after the processing; and a model correction unit that corrects the learned model based on the second log information and the second process result.
Inventor(s): Shuji IWANAGA of Sapporo City (JP) for tokyo electron limited, Tadashi NISHIYAMA of Koshi City (JP) for tokyo electron limited
IPC Code(s): G06T7/00
CPC Code(s): G06T7/0004
Abstract: a substrate inspection apparatus for inspecting a substrate, includes: an acquisition part configured to acquire an estimated image of an inspection target substrate after a process by a substrate processing apparatus, based on an image estimation model created by a machine learning by using a captured image before the process by the substrate processing apparatus and a captured image after the process by the substrate processing apparatus for each of a plurality of substrates, and a captured image of the inspection target substrate before the process by the substrate processing apparatus; and a determination part configured to determine the presence or absence of a defect in the inspection target substrate, based on a captured image of the inspection target substrate and the estimated image of the inspection target substrate after the process by the substrate processing apparatus.
Inventor(s): Shuji IWANAGA of Koshi City, Kumamoto (JP) for tokyo electron limited
IPC Code(s): G06T7/00, G06T5/40, G06V10/44, G06V10/60
CPC Code(s): G06T7/0008
Abstract: an information processing method of processing information for inspecting a substrate based on a captured image of the substrate, includes: acquiring the captured image of the substrate; creating a two-dimensional histogram using a distance from a center of the substrate and a luminance value as axes regarding the acquired captured image of the substrate; extracting a specific unevenness distribution corresponding to heterogeneous unevenness in the captured image from the two-dimensional histogram based on a predetermined domain definition; and acquiring a feature amount of the extracted specific unevenness distribution and determining a type of the specific unevenness distribution based on the feature amount.
Inventor(s): Mohd Fairuz BIN BUDIMAN of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32137
Abstract: a plasma processing apparatus disclosed herein includes a chamber, a substrate support, one or more radio-frequency power supplies, and a correction power supply. the one or more radio-frequency power supplies supply one or more radio-frequency powers to the chamber in an on period in which plasma is generated from a gas in the chamber. the correction power supply applies the negative voltage to the edge ring in one or more first periods in the on period. each of the one or more first periods corresponds to a plurality of times of a longest waveform cycle among waveform cycles of the one or more radio-frequency powers. the correction power supply stops the application of the negative voltage to the edge ring in a one or more second periods in the on period. each of the one or more second periods corresponds to the plurality of times of the longest waveform cycle.
20250046575. Plasma Processing Device_simplified_abstract_(tokyo electron limited)
Inventor(s): Takahiro SHINDO of Tokyo (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: a plasma processing apparatus comprises a plasma supply part including an upper electrode being electrically connected to a rf power supply and to which an rf voltage from the rf power supply is applied, and a lower electrode part being disposed to face the upper electrode, a gas supply part configured to supply to the plasma supply part a processing gas, and a voltage adjusting part used for adjusting a voltage of the upper electrode. the lower electrode part includes an electrode plate having a mesh structure and configured to allow communication between an inner region and an outer region of the plasma supply part provided by the lower electrode part. the plasma supply part and the voltage adjusting part are configured to lower a sheath voltage of a sheath region formed on the lower electrode part during plasma generation in the plasma supply part.
Inventor(s): Hirotoshi SAKAUE of Nirasaki City (JP) for tokyo electron limited, Hitoshi SAITO of Nirasaki City (JP) for tokyo electron limited, Hajime UGAJIN of Nirasaki City (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32449
Abstract: a method of etching a copper layer formed on a substrate arranged inside a processing chamber of a substrate processing apparatus, includes: a first operation of supplying a first processing gas that contains at least a first chlorine-containing gas and does not contain a hydrogen gas into the processing chamber, and generating a first product from the copper layer by a first plasma generated from the first processing gas; and a second operation of supplying a second processing gas that contains at least the hydrogen gas and does not contain the first chlorine-containing gas and a second chlorine-containing gas into the processing chamber, and generating a second product from the first product by a second plasma generated from the second processing gas. the first operation and the second operation are alternately executed in a repetitive manner a predetermined number of times.
20250046583. SUBSTRATE PROCESSING SYSTEM_simplified_abstract_(tokyo electron limited)
Inventor(s): Tatsuru OKAMURA of Miyagi (JP) for tokyo electron limited, Masatomo KITA of Miyagi (JP) for tokyo electron limited, Young tae SONG of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32807
Abstract: a substrate processing system disclosed here includes a vacuum transfer chamber, a plurality of substrate processing modules, a ring stocker, a transfer robot, and control circuitry. the plurality of substrate processing modules and the ring stocker are connected to the vacuum transfer chamber. when the transfer robot is transferring only a new edge ring using one of at least two end effectors, the controller controls the transfer robot to transfer a substrate via the vacuum transfer chamber using an unused end effector of the at least two end effectors in response to a substrate transfer request.
Inventor(s): Tatsuru OKAMURA of Miyagi (JP) for tokyo electron limited, Masatomo KITA of Miyagi (JP) for tokyo electron limited, Young tae SONG of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32853
Abstract: a substrate processing system according to an aspect of the present disclosure includes: a plurality of processors each including a substrate support supporting a substrate and a ring disposed around the substrate, a vacuum transferer connected to the processors, the vacuum transferer including a transfer robot for transferring the substrate or the ring, an accommodation for accommodating the ring, and a controller for executing control to remove all the substrates from the processors and the vacuum transferer, and after the removing, for executing control to transfer the ring between at least one of the processors and the accommodation.
Inventor(s): Du Zhang of Albany NY (US) for tokyo electron limited, Koki Mukaiyama of Miyagi (JP) for tokyo electron limited, Takatoshi Orui of Hillsboro OR (US) for tokyo electron limited, Tomohiko Niizeki of Miyagi (JP) for tokyo electron limited, Maju Tomura of Miyagi (JP) for tokyo electron limited, Yoshihide Kihara of Miyagi (JP) for tokyo electron limited, Mingmei Wang of Albany NY (US) for tokyo electron limited
IPC Code(s): H01L21/02, H01L21/3065, H01L21/308
CPC Code(s): H01L21/02274
Abstract: a method for processing a substrate that includes: forming a passivation layer over sidewalls of a recess in a carbon-containing layer over a substrate by a cyclic passivation process including a plurality of cycles, each of the plurality of cycles including, exposing the substrate to a first gas including a refractory metal in the absence of a plasma, and after exposing to the first gas, exposing the substrate to a second gas including oxygen or nitrogen.
20250046607. SUBSTRATE PROCESSING METHOD_simplified_abstract_(tokyo electron limited)
Inventor(s): Takashi FUSE of Yamanashi (JP) for tokyo electron limited, Kazuya KATO of Yamanashi (JP) for tokyo electron limited, Shuji AZUMO of Yamanashi (JP) for tokyo electron limited
IPC Code(s): H01L21/02
CPC Code(s): H01L21/02304
Abstract: a substrate processing method is provided that forms a target film on a first material layer of a substrate that includes the first material layer and a second material layer. the substrate processing method includes forming a first organic film on the first material layer of the substrate including the first material layer and the second material layer different from the first material layer, supplying a process gas including a raw material of a target film to form a first target film on the second material layer, and to allow the an outermost surface of the first organic film to react with the process gas to form an adsorption layer, forming a second organic film on the adsorption layer, and forming a second target film on the first target film.
Inventor(s): Mehrdad Rostami of Albany NY (US) for tokyo electron limited, Yu-Hao Tsai of Albany NY (US) for tokyo electron limited, Toru Hisamatsu of Albany NY (US) for tokyo electron limited
IPC Code(s): H01L21/3065, H01L21/033
CPC Code(s): H01L21/3065
Abstract: a method of processing a substrate that includes: forming a photoresist layer including a metal and oxygen over a substrate including silicon; patterning the photoresist layer using an extreme ultraviolet (euv) photolithographic process, a portion of the substrate being exposed after the patterning; and performing an atomic layer etching (ale) process to etch the substrate selectively relative to the patterned photoresist layer.
20250046615. ETCHING METHOD_simplified_abstract_(tokyo electron limited)
Inventor(s): Takahiro YOKOYAMA of Miyagi (JP) for tokyo electron limited, Maju TOMURA of Miyagi (JP) for tokyo electron limited, Yoshihide KIHARA of Miyagi (JP) for tokyo electron limited, Ryutaro SUDA of Miyagi (JP) for tokyo electron limited, Takatoshi ORUI of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01L21/3065, H01L21/311, H01L21/3213
CPC Code(s): H01L21/3065
Abstract: an etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. the process gas includes a phosphorus gas component and a fluorine gas component.
Inventor(s): Adam Pranda of Albany NY (US) for tokyo electron limited, Yusuke Yoshida of Albany NY (US) for tokyo electron limited, Aelan Mosden of Albany NY (US) for tokyo electron limited, Yun Han of Albany NY (US) for tokyo electron limited
IPC Code(s): H01L21/311, H01J37/32, H01L29/66
CPC Code(s): H01L21/31116
Abstract: a method of processing a substrate that includes: forming a bottom passivation layer including an oxide over a first portion of a dielectric layer at a bottom of a recess of the substrate, the recess having sidewalls including a second portion of the dielectric layer; and performing a lateral etch to etch the second portion of the dielectric layer, the bottom passivation layer covering the first portion of the dielectric layer during the lateral etch, and where the forming of the bottom passivation layer includes exposing the substrate to a first plasma including a halogen, and exposing the substrate to a second plasma including oxygen to form the bottom passivation layer.
Inventor(s): Hiroki SAKURAI of KUMAMOTO (JP) for tokyo electron limited
IPC Code(s): H01L21/67
CPC Code(s): H01L21/67051
Abstract: a substrate processing apparatus includes a rotational holding part that holds a substrate, a cleaning nozzle that discharges a mixed fluid of a cleaning liquid and a gas onto the substrate, a liquid supply nozzle that discharges a liquid onto the substrate, and a controller, wherein the controller executes, at least, discharging the liquid from the liquid supply nozzle to a central part of the substrate, discharging the cleaning liquid from the cleaning nozzle to a central part of the substrate, discharging the gas at a first flow rate from the cleaning nozzle onto the substrate to discharge the mixed fluid to a central part of the substrate, and moving the cleaning nozzle and the liquid supply nozzle from a central part to a peripheral part of the substrate while changing a flow rate of the gas to a second flow rate that is greater than the first flow rate.
Inventor(s): Yutaka MIZOBE of Koshi City (JP) for tokyo electron limited
IPC Code(s): H01L21/67, G01K1/143
CPC Code(s): H01L21/67103
Abstract: a temperature measurement unit includes a measurement substrate on which a sensor configured to measure a temperature is mounted, an information processor configured to acquire a result of detection by the sensor, and a cable connecting the sensor and the information processor to each other. the information processor is configured to be detachably installed on an installation part facing a heating area provided with a hot plate, with a cooling area interposed therebetween. the cable is configured to be able to follow movement of the measurement substrate when a cooling plate on which the measurement substrate is placed is moved from the cooling area to the heating area and the measurement substrate is placed on the hot plate in a state in which the information processor is installed on the installation part.
Inventor(s): Tamihiro KOBAYASHI of Fuchu City, Tokyo (JP) for tokyo electron limited, Takayuki YAMAGISHI of Fuchu City, Tokyo (JP) for tokyo electron limited
IPC Code(s): H01L21/687, C23C16/505, C23C16/52, H01L21/67, H01L21/677, H01L21/68
CPC Code(s): H01L21/6875
Abstract: a substrate processing apparatus includes stages each placing a substrate thereon, support columns supporting the stages, a common base supporting the support columns, and a position adjustment mechanism provided between the base and each support column. the position adjustment mechanism includes: a fixed member on a side of the base; a position adjustment member disposed above the fixed member and adjusting a position of the stage by positioning a base end portion of the support column; and gap height adjustment parts provided at at least three positions surrounding the support column, and mounting the position adjustment member to the fixed member in a state where a gap height between the fixed member and the position adjustment member is adjustable. at least one position adjustment mechanism is provided with a fixedly mounting part mounting the position adjustment member to the fixed member in a state where the gap height is fixed.
Inventor(s): Junnosuke TAGUCHI of Iwate (JP) for tokyo electron limited, Ryotaro TAKAHASHI of Iwate (JP) for tokyo electron limited
IPC Code(s): H01L21/687, H01L21/67
CPC Code(s): H01L21/68764
Abstract: a substrate processing apparatus includes a vacuum container, a rotary table provided inside the vacuum container, stages provided along a circumferential direction of the rotary table, and configured to support respective substrates disposed thereon, and a measuring instrument configured to measure characteristics of at least one substrate among the substrates disposed on the stages, wherein the stages are configured to be rotatable relative to the rotary table, wherein the measuring instrument is provided on a circumference of a circle that is centered on a central axis of the rotary table and passes through the stages in a plan view seen from a direction perpendicular to an upper surface of the rotary table.
Inventor(s): Kiyoshi MORI of Tokyo (JP) for tokyo electron limited
IPC Code(s): H01L21/687, B25J21/00, H01L21/677
CPC Code(s): H01L21/68785
Abstract: the present disclosure reduces deviation in the position and inclination of a stage due to the deformation of a processing container. a vacuum processing apparatus includes a processing container configured to be capable of maintaining an inside thereof in a vacuum atmosphere, a stage provided in the processing container such that a substrate is placed thereon, a support member passing through a hole in the bottom of the processing container to support the stage from the bottom side, a base member engaged with an end portion of the support member located outside the processing container to be movable integrally with the stage, and a plurality of actuators provided in parallel with each other between the bottom of the processing container and the base member and configured to adjust a position and an inclination of the stage by moving the base member relative to the bottom of the processing container.
Inventor(s): Hiroyuki KARASAWA of Yamanashi (JP) for tokyo electron limited, Masakazu YAMAMOTO of Iwate (JP) for tokyo electron limited, Yuichi TAKENAGA of Yamanashi (JP) for tokyo electron limited, Youngtai KANG of Tokyo (JP) for tokyo electron limited, Shota YAMAZAKI of Tokyo (JP) for tokyo electron limited
IPC Code(s): H01L21/66, C23C16/46, C23C16/52
CPC Code(s): H01L22/26
Abstract: a substrate processing method includes providing a substrate processing apparatus including a processing container that accommodates a substrate, and a heater that heats an inside of the processing container; setting a specific section with an in-plane temperature distribution of a substrate that results in a desired outcome of substrate processing based on a first prediction model that predicts a time-dependent change of the in-plane temperature distribution of the substrate after temperature increase or decrease caused by the heater; and performing the substrate processing in the specific section.
Inventor(s): Arya BHATTACHERJEE of Livermore CA (US) for tokyo electron limited, H. Jim FULFORD of Marianna FL (US) for tokyo electron limited
IPC Code(s): H01L23/498, H01L21/48, H01L23/14
CPC Code(s): H01L23/49833
Abstract: an interposer includes a first substrate including first bulk material having a first tsv extending through the first bulk material, and a second substrate including second bulk material having a second tsv extending through the second bulk material and a wiring plane formed on the second bulk material in electrical contact with the second tsv. a join interface connects the first and second substrates such that the wiring plane of the first substrate physically contacts the second substrate and the first tsvs are electrically connected to the second tsv through the wiring plane. a passive electrical device integrated within the interposer at the join interface, wherein the passive electrical device is electrically connected to the wiring plane.
Tokyo Electron Limited patent applications on February 6th, 2025
- Tokyo Electron Limited
- C23C16/30
- C23C16/455
- C23C16/458
- C23C16/56
- CPC C23C16/308
- Tokyo electron limited
- C23C16/34
- C23C16/52
- CPC C23C16/345
- F16K27/02
- F16K25/02
- F16K49/00
- H01L21/67
- CPC F16K27/0254
- G03F7/00
- G03F7/16
- G03F7/20
- CPC G03F7/70141
- CPC G03F7/70991
- G05B23/02
- CPC G05B23/0281
- G06N20/00
- CPC G06N20/00
- G06T7/00
- CPC G06T7/0004
- G06T5/40
- G06V10/44
- G06V10/60
- CPC G06T7/0008
- H01J37/32
- CPC H01J37/32137
- CPC H01J37/32174
- CPC H01J37/32449
- CPC H01J37/32807
- CPC H01J37/32853
- H01L21/02
- H01L21/3065
- H01L21/308
- CPC H01L21/02274
- CPC H01L21/02304
- H01L21/033
- CPC H01L21/3065
- H01L21/311
- H01L21/3213
- H01L29/66
- CPC H01L21/31116
- CPC H01L21/67051
- G01K1/143
- CPC H01L21/67103
- H01L21/687
- C23C16/505
- H01L21/677
- H01L21/68
- CPC H01L21/6875
- CPC H01L21/68764
- B25J21/00
- CPC H01L21/68785
- H01L21/66
- C23C16/46
- CPC H01L22/26
- H01L23/498
- H01L21/48
- H01L23/14
- CPC H01L23/49833