The boeing company (20240429041). FORMING A PLANAR SEMICONDUCTOR SURFACE
FORMING A PLANAR SEMICONDUCTOR SURFACE
Organization Name
Inventor(s)
Shanying Cui of Calabasas CA (US)
Samuel J. Whiteley of Venice CA (US)
Jason A. Graetz of Calabasas CA (US)
John J. Vajo of West Hills CA (US)
Adam E. Sorensen of Moorpark CA (US)
FORMING A PLANAR SEMICONDUCTOR SURFACE
This abstract first appeared for US patent application 20240429041 titled 'FORMING A PLANAR SEMICONDUCTOR SURFACE
Original Abstract Submitted
a method for producing a planar semiconductor surface includes forming a workpiece that has a carrier substrate, one or more insulating layers, a semiconductor layer, a first etch stop layer, and a second etch stop layer; forming a contact on the workpiece; biasing the workpiece to a second voltage through the contact; etching the second etch stop layer and part of the first etch stop layer with a photo-electrochemical etching and the second voltage that selectively removes the second etch stop layer faster than the first etch stop layer; biasing the workpiece to a first voltage through the contact; and etching the first etch stop layer and part of the semiconductor layer with the photo-electrochemical etching and the first voltage that selectively removes the first etch stop layer faster than the semiconductor layer to produce a semiconductor device with a planar surface on the semiconductor layer.