Texas instruments incorporated (20240429275). DEEP TRENCH ISOLATION WITH FIELD OXIDE
DEEP TRENCH ISOLATION WITH FIELD OXIDE
Organization Name
texas instruments incorporated
Inventor(s)
Rajni J. Aggarwal of Garland TX (US)
Steven J. Adler of Plano TX (US)
Eugene C. Davis of McKinney TX (US)
DEEP TRENCH ISOLATION WITH FIELD OXIDE
This abstract first appeared for US patent application 20240429275 titled 'DEEP TRENCH ISOLATION WITH FIELD OXIDE
Original Abstract Submitted
an electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. the isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.