Taiwan semiconductor manufacturing company, ltd. (20250151357). SEMICONDUCTOR FABRICATION PROCESSES FOR DEFECT REDUCTION
SEMICONDUCTOR FABRICATION PROCESSES FOR DEFECT REDUCTION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chung-I Yang of Hsinchu City TW
Wei-Yang Lee of Taipei City TW
Chih-Ching Wang of Kinmen County TW
SEMICONDUCTOR FABRICATION PROCESSES FOR DEFECT REDUCTION
This abstract first appeared for US patent application 20250151357 titled 'SEMICONDUCTOR FABRICATION PROCESSES FOR DEFECT REDUCTION
Original Abstract Submitted
semiconductor structures and methods for forming the same are provided. a semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin rising from the substrate, an isolation feature disposed over the substrate and between the first base fin and the second base fin, a first bottom epitaxial feature over the first base fin, a second bottom epitaxial feature over the second base fin, an isolation layer on the first bottom epitaxial feature, a first source/drain feature over the isolation layer, a second source/drain feature disposed over and in contact with the second bottom epitaxial feature, a contact etch stop layer (cesl) over the first source/drain feature and the isolation feature, a first interlayer dielectric (ild) layer over the cesl, and a second ild layer over and in direct contact with the second source/drain feature.