Taiwan semiconductor manufacturing company, ltd. (20250142955). MULTI-GATE DEVICE AND RELATED METHODS
MULTI-GATE DEVICE AND RELATED METHODS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County TW
Ching-Wei Tsai of Hsinchu City TW
Chih-Hao Wang of Hsinchu County TW
MULTI-GATE DEVICE AND RELATED METHODS
This abstract first appeared for US patent application 20250142955 titled 'MULTI-GATE DEVICE AND RELATED METHODS
Original Abstract Submitted
a method for fabricating a semiconductor device includes providing a fin in a first region of a substrate. the fin includes a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. a portion of a layer of the second type of epitaxial layers in a channel region of the first fin is removed to form a first gap between a first layer of the first type of epitaxial layers and a second layer of the first type of epitaxial layers. a first portion of a first gate structure is formed within the first gap and extending from a first surface of the first layer of the first type of epitaxial layers to a second surface of the second layer of the first type of epitaxial layers. a first source/drain feature is formed abutting the first portion of the first gate structure.