SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250142902 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a method includes forming a transistor over a substrate, the transistor comprising a channel region, a gate structure over the channel region, and a plurality of source/drain regions on opposite sides of the channel region; forming a source/drain contact over one of the source/drain regions; forming a source/drain via over the source/drain contact, wherein from a top view, the source/drain via has a t-shaped profile, the source/drain via has a first portion extending in a lengthwise direction of the channel region, and a second portion extending in a lengthwise direction of the gate structure.