SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250140683 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor structure is provided. the semiconductor structure includes a first dielectric layer, a first metal layer, a via, an air gap, an etching stop layer, a second dielectric layer, and a second metal layer. the first metal layer is embedded in the first dielectric layer. the first metal layer includes a first conductive line and a second conductive line. the via is disposed on the first conductive line. the air gap is located on the second conductive line. the sustaining layer covers the air gap. the etching stop layer is disposed on the sustaining layer. the second dielectric layer is disposed on the etching stop layer. the second metal layer is disposed on the second dielectric layer and connected to the via.