Taiwan semiconductor manufacturing company, ltd. (20250140311). SRAM POWER-UP RANDOM NUMBER GENERATOR
SRAM POWER-UP RANDOM NUMBER GENERATOR
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chen-Lin Yang of Zhubei City TW
Shih-Lien Linus Lu of Hsinchu TW
SRAM POWER-UP RANDOM NUMBER GENERATOR
This abstract first appeared for US patent application 20250140311 titled 'SRAM POWER-UP RANDOM NUMBER GENERATOR
Original Abstract Submitted
a memory device includes a memory cell array including a plurality of bit cells, each of the bit cells coupled to one of a plurality of bit lines and one of a plurality of word lines, respectively, wherein each of the plurality of bit cells is configured to: present an initial logic state during a random number generator (rng) phase; and operate as a memory cell at a first voltage level during a sram phase; and a controller controlling bit line signals on the plurality of bit lines and word line signals on the plurality of word lines, wherein the controller is configured to: during the rng phase, precharge the plurality of bit lines to a second voltage level, and determine the initial logic states of the plurality of bit cells to generate at least one random number, wherein the second voltage level is lower than the first voltage level.