METHOD FOR FORMING SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Harry-Hak-Lay Chuang of Zhubei City TW

Sheng-Huang Huang of Hsinchu City TW

Hung-Cho Wang of Taipei City TW

Sheng-Chang Chen of Hsinchu County TW

METHOD FOR FORMING SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 20250140295 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE

Original Abstract Submitted

a method for fabricating a semiconductor device is provided. the method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.