SEMICONDUCTOR CAPACITOR FOR STACKED PIXEL

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shen-Hui Hong of Tainan City TW

Chun-Chieh Chuang of Tainan City TW

Feng-Chi Hung of Chu-Bei City TW

Jen-Cheng Liu of Hsin-Chu City TW

SEMICONDUCTOR CAPACITOR FOR STACKED PIXEL

This abstract first appeared for US patent application 20250133856 titled 'SEMICONDUCTOR CAPACITOR FOR STACKED PIXEL

Original Abstract Submitted

various embodiments of the present disclosure are directed towards an image sensor including a first integrated circuit (ic) die stacked with a second ic die. the first ic die includes a plurality of photodetectors disposed within a first substrate. the second ic die includes a plurality of pixel transistors and a semiconductor capacitor disposed on a second substrate. the semiconductor capacitor includes a first capacitor electrode, a capacitor dielectric layer, and a doped capacitor region. the first capacitor electrode overlies the second substrate and comprises a protrusion disposed in the second substrate. the capacitor dielectric layer is disposed between the first capacitor electrode and the second substrate. the doped capacitor region is disposed within the second substrate and underlies the first capacitor electrode. the plurality of photodetectors, the plurality of pixel transistors, and the semiconductor capacitor define a pixel.