SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jer-Fu Wang of Taipei City (TW)

Hung-Li Chiang of Taipei City (TW)

Goutham Arutchelvan of Hsinchu County (TW)

Wei-Sheng Yun of Taipei City (TW)

Chao-Ching Cheng of Hsinchu City (TW)

Iuliana Radu of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250072058 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor device structure and a manufacturing method thereof are provided. the semiconductor device structure includes a substrate, complex two-dimensional material layers disposed over the substrate, a gate structure and source and drain regions. the complex two-dimensional material layers are arranged spaced apart from one each other and in parallel to one another. the gate structure is disposed across and wraps around and surrounds first portions of the complex two-dimensional material layers. the source and drain regions are disposed on opposite sides of the gate structure and wrap around and surround second portions of the complex two-dimensional material layers.