Taiwan semiconductor manufacturing company, ltd. (20250072051). Gate Stack for Multigate Device
Gate Stack for Multigate Device
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Wei Lee of New Taipei City (TW)
Tai-Wei Hwang of Kinmen County (TW)
Gate Stack for Multigate Device
This abstract first appeared for US patent application 20250072051 titled 'Gate Stack for Multigate Device
Original Abstract Submitted
an exemplary gate stack includes a gate dielectric (e.g., a high-k dielectric layer over an interfacial layer) and a gate electrode (e.g., a work function layer over the high-k dielectric layer, a cap over the work function layer, and a bulk fill layer over the cap). the gate stack wraps and/or surrounds a first semiconductor layer disposed over a second semiconductor layer. the gate dielectric and the work function layer (and not the cap and/or the bulk fill layer) fill a space between the first semiconductor layer and the second semiconductor layer. a ratio of oxygen in outer portions of the gate stack to inner portions of the gate stack may be about 1 to about 1.25. a thickness of the work function layer at inner portions of the gate stack may be less than a thickness of the work function layer at outer portions of the gate stack.
