Taiwan semiconductor manufacturing company, ltd. (20250069989). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yen-Chih Huang of Hsinchu (TW)
Chung-Chuan Huang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 20250069989 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
a semiconductor device includes a feol structure and a beol structure. the beol structure is formed over the feol structure and includes a conductive layer, an etching stop layer (esl) structure, a through via and a barrier layer. the esl structure is formed over the conductive layer and has a first recess and a lateral surface. the through via passes through the esl structure to form the first recess and the lateral surface. the barrier layer covers the lateral surface and the first recess. the first recess is recessed with respect to the lateral surface, and the first recess has a first depth ranging between 1 nm and 7 nm.