Taiwan semiconductor manufacturing company, ltd. (20250063815). INTEGRATED CIRCUIT
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INTEGRATED CIRCUIT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
INTEGRATED CIRCUIT
This abstract first appeared for US patent application 20250063815 titled 'INTEGRATED CIRCUIT
Original Abstract Submitted
an ic is provided. the ic includes a first p-type finfet and a second p-type finfet. the first p-type finfet includes a discontinuous sige fin. the second p-type finfet includes a continuous si-base fin. the ic further includes first source/drain regions on the discontinuous sige fin and second source/drain regions on the continuous si-base fin. a first depth of the first source/drain regions is greater than a second depth of the second source/drain regions.