CONTACT GATE ISOLATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jia-Chuan You of Taoyuan County (TW)

Chia-Hao Chang of Hsinchu City (TW)

Chu-Yuan Hsu of Taichung City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu (TW)

CONTACT GATE ISOLATION

This abstract first appeared for US patent application 20250063792 titled 'CONTACT GATE ISOLATION

Original Abstract Submitted

gate isolation processes (e.g., gate-to-source/drain contact isolation) are described herein. an exemplary contact gate isolation process may include recessing (e.g., by etching) sidewall portions of a high-k gate dielectric and gate spacers of a gate structure to form a contact gate isolation (cgi) opening that exposes sidewalls of a gate electrode of the gate structure, forming a gate isolation liner along the sidewalls of the gate electrode that partially fills the cgi opening, and forming a gate isolation layer over the gate isolation liner that fills a remainder of the cgi opening. a dielectric constant of the gate isolation liner is less than a dielectric constant of the high-k gate dielectric. a dielectric constant of the gate isolation layer is less than a dielectric constant of the high-k gate dielectric. a dielectric constant of the gate isolation layer may be less than a dielectric constant of the gate isolation layer.