CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Cheng-Wei Chang of Taipei City (TW)

Chia-Hung Chu of Taipei City (TW)

Hsu-Kai Chang of Hsinchu (TW)

Sung-Li Wang of Zhubei City (TW)

Kuan-Kan Hu of Hsinchu (TW)

Shuen-Shin Liang of Hsinchu County (TW)

Kao-Feng Lin of New Taipei City (TW)

Hung Pin Lu of Hsinchu City (TW)

Yi-Ying Liu of Hsinchu City (TW)

Chuan-Hui Shen of Kaohsiung City (TW)

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

This abstract first appeared for US patent application 20250063758 titled 'CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

Original Abstract Submitted

a titanium precursor is used to selectively form a titanium silicide (tisi) layer in a semiconductor device. a plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. the diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. the titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. the selective titanium silicide layer formation results in the formation of a titanium silicon nitride (tisin) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.