BACKSIDE CONTACT RESISTANCE REDUCTION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

BACKSIDE CONTACT RESISTANCE REDUCTION

This abstract first appeared for US patent application 20250062161 titled 'BACKSIDE CONTACT RESISTANCE REDUCTION

Original Abstract Submitted

in an embodiment, an exemplary method includes forming a source/drain opening extending into a substrate, forming a semiconductor layer in a bottom portion of the source/drain opening, forming a dielectric feature in the source/drain opening and on the semiconductor layer, epitaxially growing a source/drain feature in the source/drain opening, wherein the source/drain feature is in direct contact with the dielectric feature, removing the semiconductor layer and a portion of the substrate disposed directly under the semiconductor layer to form a trench, selectively removing the dielectric feature to enlarge the trench, after the selectively removing of the dielectric feature, forming a silicide layer in the enlarged trench, and depositing a conductive layer in the enlarged trench and in direct contact with the silicide layer.