Taiwan semiconductor manufacturing company, ltd. (20250015167). MULTI-GATE DEVICE AND RELATED METHODS
MULTI-GATE DEVICE AND RELATED METHODS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Yi Lin of Tainan County TW
Shi-Sheng Hu of Tainan City TW
Chao-Chi Chen of Tainan City TW
MULTI-GATE DEVICE AND RELATED METHODS
This abstract first appeared for US patent application 20250015167 titled 'MULTI-GATE DEVICE AND RELATED METHODS
Original Abstract Submitted
a method of fabricating a semiconductor device includes providing a first fin extending from a substrate. in some embodiments, the method further includes forming a first gate stack over the first fin. in various examples, the method further includes forming a first doped layer along a surface of the first fin including beneath the first gate stack. in some cases, a first dopant species of the first doped layer is of a same polarity as a second dopant species of a source/drain feature of the semiconductor device.