VARACTORS HAVING INCREASED TUNING RATIO

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

VARACTORS HAVING INCREASED TUNING RATIO

This abstract first appeared for US patent application 20250015159 titled 'VARACTORS HAVING INCREASED TUNING RATIO

Original Abstract Submitted

semiconductor structures and a method of forming the same are provided. in an embodiment, an exemplary semiconductor structure includes a doped region in a substrate and comprising a first-type dopant, a plurality of nanostructures disposed directly over the doped region, a gate structure wrapping around each nanostructure of the plurality of nanostructures, a first epitaxial feature and a second epitaxial feature coupled to the plurality of nanostructures, wherein each of the first epitaxial feature and the second epitaxial feature comprises the first-type dopant, a first insulation feature disposed between the first epitaxial feature and the doped region, and a second insulation feature disposed between the second epitaxial feature and the doped region.