Multigate Device Having Reduced Contact Resistivity

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Multigate Device Having Reduced Contact Resistivity

This abstract first appeared for US patent application 20250015154 titled 'Multigate Device Having Reduced Contact Resistivity

Original Abstract Submitted

an exemplary method includes forming an opening in an interlevel dielectric (ild) layer. the opening in the ild layer exposes a doped epitaxial layer. the method further includes performing an in-situ doping deposition process, an annealing process, and an etching process to form a doped semiconductor layer over the doped epitaxial layer. the doped semiconductor layer partially fills the opening. the method further includes forming a metal-comprising structure that fills a remainder of the opening. the metal-comprising structure is disposed over a top and sidewalls of the doped epitaxial layer. the doped semiconductor layer is disposed between the metal-comprising structure and the top of the doped epitaxial layer and between the metal-comprising structure and the sidewalls of the doped epitaxial layer. the in-situ deposition process may implement a temperature less than about 350� c. the doped epitaxial layer includes p-type dopant (e.g., boron), and the doped semiconductor layer includes gallium.