Taiwan semiconductor manufacturing company, ltd. (20250015141). SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jian-Zhi Huang of Changhua County TW
Yu-Tung Lin of Taoyuan City TW
En-Cheng Chang of Pingtung County TW
Ting-Ying Chiu of Taipei City TW
I-Chih Ni of New Taipei City TW
SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
This abstract first appeared for US patent application 20250015141 titled 'SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
Original Abstract Submitted
a semiconductor device includes a substrate, a first dielectric layer, a channel layer and source/drain electrodes. the first dielectric layer is over the substrate. the channel layer is over the first dielectric layer. source/drain electrodes are over the channel layer. the source/drain electrodes comprise a 2d semimetal material. the channel layer comprises a 2d semiconductor material interfacing the 2d semimetal material of the source/drain electrodes.