Taiwan semiconductor manufacturing company, ltd. (20250006500). SEMICONDUCTOR DEVICE AND METHOD
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ting-Gang Chen of Taipei City TW
SEMICONDUCTOR DEVICE AND METHOD
This abstract first appeared for US patent application 20250006500 titled 'SEMICONDUCTOR DEVICE AND METHOD
Original Abstract Submitted
an embodiment includes a method including forming an opening in a cut metal gate region of a metal gate structure of a semiconductor device, conformally depositing a first dielectric layer in the opening, conformally depositing a silicon layer over the first dielectric layer, performing an oxidation process on the silicon layer to form a first silicon oxide layer, filling the opening with a second silicon oxide layer, performing a chemical mechanical polishing on the second silicon oxide layer and the first dielectric layer to form a cut metal gate plug, the chemical mechanical polishing exposing the metal gate structure of the semiconductor device, and forming a first contact to a first portion of the metal gate structure and a second contact to a second portion of the metal gate structure, the first portion and the second portion of the metal gate structure being separated by the cut metal gate plug.