Taiwan semiconductor manufacturing company, ltd. (20240413221). INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Wei Chen of Hsinchu (TW)

Chih-Yu Hsu of Hsinchu (TW)

Hui-Chi Chen of Hsinchu County (TW)

Shan-Mei Liao of Hsinchu (TW)

Jian-Hao Chen of Hsinchu City (TW)

Cheng-Hao Hou of Hsinchu City (TW)

Huang-Chin Chen of Hsinchu (TW)

Cheng Hong Yang of Hsinchu (TW)

Shih-Hao Lin of Hsinchu (TW)

Tsung-Da Lin of Hsinchu (TW)

Da-Yuan Lee of Hsinchu County (TW)

Kuo-Feng Yu of Hsinchu County (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Chi On Chui of Hsinchu City (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

This abstract first appeared for US patent application 20240413221 titled 'INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

Original Abstract Submitted

a device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. the gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. the gate dielectric layer includes nitrogen element.