VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347640 titled 'VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

The semiconductor device described in the abstract includes a first transistor and a second transistor stacked over the first transistor. The first transistor has vertically stacked channel members and a source/drain feature, while the second transistor has a fin structure and a source/drain feature. A conductive feature connects the source/drain features of both transistors.

The semiconductor device features vertically stacked channel members in the first transistor.
The second transistor includes a fin structure for improved performance.
A conductive feature connects the source/drain features of both transistors for enhanced functionality.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in the development of high-performance electronic devices.

Problems Solved: - Improved performance and functionality of semiconductor devices. - Enhanced connectivity between different transistor components.

Benefits: - Increased efficiency and speed in electronic devices. - Enhanced overall performance of semiconductor devices.

Commercial Applications: - This technology can be utilized in the production of high-speed processors. - It can be integrated into advanced electronic devices for improved functionality.

Prior Art: - Researchers can explore prior patents related to semiconductor device structures and connectivity.

Frequently Updated Research: - Stay updated on advancements in semiconductor device technology for potential improvements in performance and functionality.

Questions about Semiconductor Device Technology: 1. How does the conductive feature enhance the connectivity between the transistors? 2. What are the potential implications of using a fin structure in the second transistor design?

Original Abstract Submitted

a semiconductor device according to the present disclosure includes a first transistor and a second transistor disposed over the first transistor. the first transistor includes a plurality of channel members vertically stacked over one another, and a first source/drain feature adjoining the plurality of channel members. the second transistor includes a fin structure, and a second source/drain feature adjoining the fin structure. the semiconductor device further includes a conductive feature electrically connecting the first source/drain feature and the second source/drain feature.