Taiwan semiconductor manufacturing company, ltd. (20240295825). Lithography Apparatus and Method simplified abstract
Lithography Apparatus and Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Chun Yen of Tainan City (TW)
Shang-Chieh Chien of New Taipei City (TW)
Heng-Hsin Liu of New Taipei City (TW)
Lithography Apparatus and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240295825 titled 'Lithography Apparatus and Method
The method described in the patent application involves heating a byproduct transport ring of an extreme ultraviolet source, followed by heating and cooling the vanes of the source in a specific sequence.
- Heating the byproduct transport ring first, then moving on to heat the vanes, and finally cooling the vanes and the byproduct transport ring.
- The byproduct transport ring is located beneath the vanes of the extreme ultraviolet source.
- The heating and cooling processes are done for specific durations to ensure optimal performance of the source.
Potential Applications: - Semiconductor manufacturing - Lithography processes - Extreme ultraviolet lithography systems
Problems Solved: - Efficient cooling and heating of components in extreme ultraviolet sources - Ensuring consistent performance and longevity of the source
Benefits: - Improved reliability and performance of extreme ultraviolet sources - Enhanced precision in semiconductor manufacturing processes
Commercial Applications: Extreme ultraviolet lithography systems for semiconductor industry applications
Questions about the technology: 1. How does the specific heating and cooling sequence benefit the performance of the extreme ultraviolet source? 2. What are the potential challenges in implementing this method in industrial settings?
Frequently Updated Research: Research on advanced materials for extreme ultraviolet sources and their impact on performance and efficiency.
Original Abstract Submitted
in an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.